National Repository of Grey Literature 6 records found  Search took 0.00 seconds. 
Properties of color centers in diamond studied by methods of femtosecond laser spectroscopy
Streshkova, Neli ; Malý, Petr (advisor) ; Dzurňák, Branislav (referee)
In this work, we focus on the interaction of SiV color centers in diamond with femtose- cond light pulses. In the theoretical part, a script is developed to simulate the experimen- tal varying stripe length method and the effects of saturated optical gain are investigated. In the experimental part, photoluminescence and transient differential absorption under non-resonant excitation are studied. The result of the luminescence measurements are estimates of the effective cross-sections of single-photon absorption for the wavelengths 620 nm, 515 nm and 340 nm, as well as the effective cross-section of three-photon absorp- tion for 2000 nm. The result of the differential absorption measurements is the relaxation constant of the excited level of the SiV center and the upper estimate of the time duration of the initial dynamics. 1
Ultrafast processes in semiconductor nanocrystals
Dzurňák, Branislav ; Trojánek, František (advisor) ; Dohnalová, Kateřina (referee)
This diploma thesis deals with optical properties of silicon nanocrystals implanted in silicon oxide substrate. We examined samples with various concentrations of nanocrystals. We measured Raman spectra of our samples and identified size of nanocrystals and distance between them as function of depth. We measured absorption and reflection of samples and calculated the energy of band gap. For various implantation doses we examined temperature dependence of luminescence spectra. Two peaks were observed for excitation wavelength of 408 nm, the first shifts towards longer wavelength with increasing temperature, the second one stays unchanging. We observed low-temperature resonant luminescence in order to identify fonon structure. During observation of time-resolved luminescence two components of fast luminescence appeared - the slower in scale of nanoseconds, the faster in scale of picoseconds. We devoted to study of the faster component. For the faster component we observed up-converted luminescence. Intensity dependence of this component is quadratic. We also observe degradation of luminescence owing to strong laser beam. In conclusion we discussed origin of each component of luminescence spectra.
Ultrafast processes in semiconductor nanokrystals
Dzurňák, Branislav
This diploma thesis deals with optical properties of silicon nanocrystals implanted in silicon oxide substrate. We examined samples with various concentrations of nanocrystals. We measured Raman spectra of our samples and identified size of nanocrystals and distance between them as function of depth. We measured absorption and reflection of samples and calculated the energy of band gap. For various implantation doses we examined temperature dependence of luminescence spectra. Two peaks were observed for excitation wavelength of 408 nm, the first shifts towards longer wavelength with increasing temperature, the second one stays unchanging. We observed low-temperature resonant luminescence in order to identify fonon structure. During observation of time-resolved luminescence two components of fast luminescence appeared - the slower in scale of nanoseconds, the faster in scale of picoseconds. We devoted to study of the faster component. For the faster component we observed up-converted luminescence. Intensity dependence of this component is quadratic. We also observe degradation of luminescence owing to strong laser beam. In conclusion we discussed origin of each component of luminescence spectra.
Study of semiconductors by methods of laser spectroscopy
Dzurňák, Branislav ; Trojánek, František (advisor) ; Oswald, Jiří (referee) ; Herynková, Kateřina (referee)
Title: Study of semiconductors by methods of time resolved laser spectroscopy: Luminescence spectroscopy of nanocrystalline diamond Author: Branislav Dzurňák Department: Department of Chemical Physics and Optics Supervisor: doc. RNDr. František Trojánek, Ph.D. Abstract: The PhD thesis is focused on optical properties of nanocrystalline diamond prepared by chemical vapour deposition method. Photoluminescence of nanocrystalline diamond samples and effects of ambient temperature, pressure, pH and UV irradiation on it are studied by laser spectroscopy. Results suggest the keyrole of water and air adsorbates which affect the energy states in the sub-bandgap region of diamond. Photoluminescence decay of samples of different surface termination and structure and its dependency on ambient pressure and temperature is studied by methods of ultrafast (picosecond and nanosecond scale) laser spectroscopy. Results are analysed by power-law decay function which fits well the luminescence decay curves and also describes the dynamics of charge carriers in states localised within the bandgap. The model of interaction of nanocrystalline diamond with air adsorbates is proposed. Non-linear optical properties of nanocrystalline diamond are also studied, namely the generation of second and third harmonic frequency. The thesis...
Ultrafast processes in semiconductor nanocrystals
Dzurňák, Branislav ; Trojánek, František (advisor) ; Dohnalová, Kateřina (referee)
This diploma thesis deals with optical properties of silicon nanocrystals implanted in silicon oxide substrate. We examined samples with various concentrations of nanocrystals. We measured Raman spectra of our samples and identified size of nanocrystals and distance between them as function of depth. We measured absorption and reflection of samples and calculated the energy of band gap. For various implantation doses we examined temperature dependence of luminescence spectra. Two peaks were observed for excitation wavelength of 408 nm, the first shifts towards longer wavelength with increasing temperature, the second one stays unchanging. We observed low-temperature resonant luminescence in order to identify fonon structure. During observation of time-resolved luminescence two components of fast luminescence appeared - the slower in scale of nanoseconds, the faster in scale of picoseconds. We devoted to study of the faster component. For the faster component we observed up-converted luminescence. Intensity dependence of this component is quadratic. We also observe degradation of luminescence owing to strong laser beam. In conclusion we discussed origin of each component of luminescence spectra.
Ultrafast processes in semiconductor nanokrystals
Dzurňák, Branislav
This diploma thesis deals with optical properties of silicon nanocrystals implanted in silicon oxide substrate. We examined samples with various concentrations of nanocrystals. We measured Raman spectra of our samples and identified size of nanocrystals and distance between them as function of depth. We measured absorption and reflection of samples and calculated the energy of band gap. For various implantation doses we examined temperature dependence of luminescence spectra. Two peaks were observed for excitation wavelength of 408 nm, the first shifts towards longer wavelength with increasing temperature, the second one stays unchanging. We observed low-temperature resonant luminescence in order to identify fonon structure. During observation of time-resolved luminescence two components of fast luminescence appeared - the slower in scale of nanoseconds, the faster in scale of picoseconds. We devoted to study of the faster component. For the faster component we observed up-converted luminescence. Intensity dependence of this component is quadratic. We also observe degradation of luminescence owing to strong laser beam. In conclusion we discussed origin of each component of luminescence spectra.

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