National Repository of Grey Literature 4 records found  Search took 0.01 seconds. 
Preparation of surfaces with diffusion barrier for studying initial phase of semiconductor nanowire growth
Andrýsek, Michal ; Lišková, Zuzana (referee) ; Kolíbal, Miroslav (advisor)
This bachelor's thesis deals with preparation of surfaces with diffusion barriers for studying germanium nanowire growth. Semicondutor growth mechanism is explained as well as the role of diffusion barriers, such as graphene or aluminium oxide, during nanowire growth. Graphene was prepared using CVD method and aluminium oxide was prepared using ALD method. It is shown that nanowires could not grow on prepared samples with diffusion barriers on them.
Growth of highly doped ZnO nanowires
Andrýsek, Michal ; Macák, Jan (referee) ; Kolíbal, Miroslav (advisor)
This diploma thesis is about ZnO nanowires growth, their doping and analysis. High temperature and pressure oxidation of brass foil and deposition from effusion cell in oxidative atmosphere utilized for nanowires growth. The growth is affected by different temperature and pressure. It has been shown that under certain experimental conditions nanowires can be prepared by the former method. However, the growth was hindered when effusion cell was used.
Growth of highly doped ZnO nanowires
Andrýsek, Michal ; Macák, Jan (referee) ; Kolíbal, Miroslav (advisor)
This diploma thesis is about ZnO nanowires growth, their doping and analysis. High temperature and pressure oxidation of brass foil and deposition from effusion cell in oxidative atmosphere utilized for nanowires growth. The growth is affected by different temperature and pressure. It has been shown that under certain experimental conditions nanowires can be prepared by the former method. However, the growth was hindered when effusion cell was used.
Preparation of surfaces with diffusion barrier for studying initial phase of semiconductor nanowire growth
Andrýsek, Michal ; Lišková, Zuzana (referee) ; Kolíbal, Miroslav (advisor)
This bachelor's thesis deals with preparation of surfaces with diffusion barriers for studying germanium nanowire growth. Semicondutor growth mechanism is explained as well as the role of diffusion barriers, such as graphene or aluminium oxide, during nanowire growth. Graphene was prepared using CVD method and aluminium oxide was prepared using ALD method. It is shown that nanowires could not grow on prepared samples with diffusion barriers on them.

See also: similar author names
2 Andrýsek, Marek
1 Andrýsek, Martin
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