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Growth of InP crystals for radiation detectors and other application
Pekárek, Ladislav ; Yatskiv, Roman
Bulk InP single crystals were grown by Czochralski method. Various dopants were added to the melt to obtain single crystals suitable for radiation detectors and other application. The intentionally doped of InP crystals were characterized by measurements of resistivity and Hall coefficient. Prototype detectors were prepared and evaluated by spectral detection of alpha particles and x-rays.
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LPE Growth of III-V Semiconductors from rare-earth Treated Melts
Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel
We focus on the characterization of InP and InGaAsP layers prepared by liquid phase epitaxy with rare-earth admixtures. We applied photoluminescence spectroscopy (PL), capacitance-voltage measurements, and secondary ion mass spectroscopy in order to explain: (i) the gettering effect and conductivity crossover of InP layers for Pr treated samples, (ii) narrowing of the PL and elecroluminescent spectra of the active InGaAsP region of a double-heterostructure LED.
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Růst krystalů InP pro detektory záření a jiné použití
Pekárek, Ladislav ; Yatskiv, Roman
Bulk InP single crystals were grown by Czochralski method. Various dopants were added to the melt to obtain single crystals suitable for radiation detectors and other application. The intentionally doped of InP crystals were characterized by measurements of resistivity and Hall coefficient. Prototype detectors were prepared and evaluated by spectral detection of alpha particles and x-rays.
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Růst InP metodou LPE s přídavkem prvků vzácných zemin do taveniny
Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel
Addition of REs to the growth melt is known to have purifying effect on AIIIBV LPE layers. Each member of REs family acts in its own way. Small addition of Tb, Dy, Tm, and Pr leads to pronounced gettering of shallow donors, the high purity n-type InP can be grown. Exceeding certain concentration, reversal of conductivity type from n to p occurs. Addition of Tm during growth on InP:Fe substrates always results in the preparation of semi-insulating layers due to Fe out-diffusion mediated by RE admixture.
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