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Operating Characteristics of LED Sources
Brdečko, Aleš ; Diviš, Daniel (referee) ; Baxant, Petr (advisor)
This semester thesis is dealing with issues of LED (light emiting diod).In the text we can find general summary knowledges about LED, relating their history, construction, principle of working and also treatise about of semiconductor compounds. In thesis are given examples of use indicating their advantages and disadvantages and indicating their parameters. The practical content of this thesis is evaluation of measurement performed on some samples of LED especially graphics addiction of crosses and V-A characteristics measured in addiction on current.
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Microplasma Noise as a Diagnostic Tool for PN Junctions of High-Voltage Rectifier Diodes
Raška, Michal ; Chobola, Zdeněk (referee) ; Hájek, Karel (referee) ; Koktavý, Pavel (advisor)
The doctoral thesis deals with diagnostics of local defects in PN junctions and brings new information about microplasma noise behaviour and its usage for the temperature changes detection inside PN junctions. Defects in PN junctions are the source of microplasma noise. There were deviations observed in microplasma noise from the common known rectangle shape pulses during the measurements. These deviations were correlated with the temperature change directly in the defect area and in the defect area surroundings. Generation and recombination coefficients are commonly thought to be constant. However, these coefficients were observed to be not stable with time and this effect is explained in this work. The doctoral thesis then focuses on the PN junction parameters determination in the case when it is not possible to define unambiguously whether it is abrupt or linearly graded PN junction. The most significant parameters which are to be determined are barrier capacity, diffusion voltage and depleted area width in dependence on the voltage. The correlation between local avalanche discharge in PN junction and negative differential resistance appearance on VA characteristics of reverse-biased diode was qualitatively verified. The last important point in the work is computer modelling of temperature behaviour in the defect area and its surroundings during local avalanche breakdown. Thus the method of real diodes heating area parameters determination was introduced.
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Capacitance measurement of high-voltage PN junctions
Derishev, Anton ; Kosina, Petr (referee) ; Boušek, Jaroslav (advisor)
The work deals with the capacitance measurement of high-voltage PN junctions. The work is divided into theoretical and practical parts. The theoretical part presents insight into the fundamental properties of PN junctions and methods for measuring of the capacitance of PN junctions, primarily by C-V measurement. In the practical part, several kinds of measuring circuits are introduced and a suitable method of measurement is found. The calculations of basic parameters - the width of the base and resistivity are presented and discussed. The results were compared with the values obtained by calculation from the technological parameters of the junction.
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Semiconductors structures , charge collection method
Golda, Martin ; Čudek, Pavel (referee) ; Špinka, Jiří (advisor)
This thesis treats about semiconducting silicon structures. It describes the characteristics of the element and creation of P and N type of semiconductor and discusses about different types of faults in the crystal lattice. It deals with the description of methods for monitoring faults in semiconductor ie. determining the properties of semiconductors via EBIC, EBIV and CC methods, which are used for analysis of semiconductor devices and materials. Determining the properties of silicon components is being done by generation of charge carriers in the sample loaded in chamber of the scanning electron microscope by high energy electrons. Bellow the sample surface is being generated an electric charge which is being collected by probes. Using this data obtained by EBIC and CC were evaluated diffusion length and lifetime of electrons.
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Influence of magnetic field on photovoltaic solar cell
Kadlec, Michal ; Šubarda, Jiří (referee) ; Šimonová, Lucie (advisor)
This thesis describes the issue of PN junction of photovoltaic cells, photovoltaic effect physics, basic materials used in photovoltaic and their properties, important for the area of photovoltaic. It deals with the problems of magnetism focused on electromagnetic fields. Experimental facility for measuring the influence of magnetic field on the solar cells through the Helmholtz coils was constructed. This work also dealing with the influence of magnetic radiation on photovoltaic cells and the influence of electromagnetic waves on the volt-ampere characteristics of the photovoltaic cell.
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Quantum efficiency measurement of optoelectronic components and development of experimental equipment
Lipr, Tomáš ; Palai-Dany, Tomáš (referee) ; Macků, Robert (advisor)
This thesis deals with the issue of quantum efficiency measurement of optoelectronic devices. The physical nature of silicon solar cells is explained here. In addition, the quantum efficiency as a concept is introduced. There is also discussed the influence of a solar cell semiconductor structure on the quantum efficiency itself. Furthermore, the thesis is focused on the design of an experimental set-up for automated measurement and data acquisition. The final realization of the step motor control unit is described in detail. It includes local and/or remote operations, design and development motivation. The next chapter is dedicated to analysis of the Matlab source code for remote operation, data acquisition and presentation. The final part of the thesis gives attention to experiments with real structures, not only the solar cells. The obtained results of analyzed measurements are presented at the conclusion.
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Computer modeling of MOSFET transistor
Major, Jan ; Harwot, Ondřej (referee) ; Pokorný, Michal (advisor)
Work is focused on computer modeling of PN junction and MOSFET transistor in the program COMSOL Multiphysics and in program TiberCAD. The text is discussed on the drift and diffusion in semiconductors. Also shown is a method of modeling the PN junction and MOSFET transistor in the programs and compare models.
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Application of radiation emitted from local areas of PN junction for solar cell diagnostics
Krčál, Ondřej ; Raška, Michal (referee) ; Macků, Robert (advisor)
The microplasma discharges in the PN junction local defect micro-regions are as a rule, accompanied by the emission of light. This radiation from solar cell PN junctions was measured by means of a optical fibre connected to the optical input of a photomultiplier. By inching the fibre by means of computercontrolled X-Y plotter above the cell surface a 2-D image of the irradiation local regions has been created. It is seen that a cell of a superficial area of 100 square cm contains a large number of defects, which depends on applied reverse voltage. This method can be a convenient tool for study and diagnostics of optoelectronic devices.
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Noise diagnostics of rectifier diodes PN junctions
Klimíček, Jaromír ; Macků, Robert (referee) ; Raška, Michal (advisor)
The thesis deals with the design of the measurement installation, which is intended for the microplasma noise measurements. This noise is being generated in the defective parts of the PN junction. The goal of this work is to design the measurement installation and to realize the fully functional workbench for the analogical noise related measurements and to determine the transfer function of the measurement installation. Main part of the work is to choose proper parameters for the measuring devices and to design the software intended for the automated measurements. Consequently, we have to process the measured waveforms of the microplasma noise, to determine the dependency of the noise on the signal magnitude and to calculate the power spectral noise density. Finally, we have to determine the transfer function of the measurement installation and to design the inversion filter.
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Multilayer semiconductor devices
SEDLÁK, Jiří
There is illustrated principle of semiconductors in the first chapter. A description of three semiconductors elements transistor, thyristor and triac is in chapter two, three and four. The main target is to create multimedia material for study in form of www page for students in electrotechnics branch. These pages will be a part of the essay and also I will write it to CD and it takes place in university system eAMOS.
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