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Electron Ion Recombination in Low Temperature Plasma
Dohnal, Petr ; Glosík, Juraj (advisor) ; Čurík, Roman (referee) ; Novotný, Oldřich (referee)
The presented work focuses on study of electron - positive ion recombination in low temperature plasma. The principal method used were Flowing afterglow with Langmuir probe and Stationary afterglow with Cavity Ring-Down Spectrometer. For the first time electron and neutral assisted collisional radiative recombination of Ar+ ions was studied in temperature range of 50 - 200 K. Resulting ternary recombination rate coefficients are in good agreement with theoretical predictions. Recombination of H3 + and D3 + ions with electrons was studied in the temperature range of 50 - 300 K and binary and ternary recombination rate coefficients were obtained. The effect of nuclear spin on recombination of H3 + ions with electrons was studied in the temperature range of 80 - 200 K and state selective recombination rate coefficients were obtained for ortho- and para-H3 + . Results show that at 80 K para-H3 + recombines with electrons substantially faster than ortho-H3 + .
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Electron-Ion Recombination at Temperatures below 300K
Kotrík, Tomáš
Title: Recombination study of ions with electrons at temperatures below 300 K Author: Tomáš Kotrík Department: Department of Surface and Plasma Science Supervisor of the doctoral thesis: Prof. RNDr. Juraj Glosík, DrSc. Department of Surface and Plasma Science Abstract: Presented is the study of recombination of ions with electrons performed at low temperatures using the Flowing afterglow with Langmuir probe experimental technique. Studied was the dissociative recombination of H and D ions at temperatures 77 - 300 K. Apart from a two-body also a three-body recombination channel assisted by neutral He atoms was identified and studied. The obtained temperature dependence of the two-body recombination rate coefficient is in a good agreement with findings of other experimental and theoretical works. The dissociative recombination of HCO and DCO ions with electrons was studied in the temperature range 150 - 300 K. The observed temperature dependence of measured recombination rate coefficient for HCO and DCO ions (~T -1.3 and ~T -1.1 , respectively) is in agreement with the majority of previous experimental works and evokes that indirect mechanism governs the recombination process. The electron- assisted collisional-radiative recombination of Ar ions was for the first time studied at temperatures 50 - 300 K. The...
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Study of reactions of simple ions in low temperature plasma
Kálosi, Ábel ; Plašil, Radek (advisor) ; Picková, Irena (referee)
The subject of this thesis is the study of the probe diagnostic method of low temperature plasma. The basis of Langmuir probe diagnostics in terms of appli- cation on apparatus CryoFALP II for the study of reactions of simply particles, the principle of the FALP technique and the experimental method of undertaken measurements are described. As a part of the thesis a package of evaluation pro- grams were compiled, which are ready to be a part of the measuring system as described in the thesis. Main results concern verification of the proper application of Langmuir probe technique in conditions characteristic for the apparatus, argon plasma was chosen as the medium of the measurements, where the characteristic loss process is ambipolar diffusion of charged particles. The application of the acquired knowledge is shown on recombination in oxygen plasma.
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Electron-Ion Recombination at Temperatures below 300K
Kotrík, Tomáš ; Glosík, Juraj (advisor) ; Pysanenko, Andriy (referee) ; Trunec, David (referee)
Title: Recombination study of ions with electrons at temperatures below 300 K Author: Tomáš Kotrík Department: Department of Surface and Plasma Science Supervisor of the doctoral thesis: Prof. RNDr. Juraj Glosík, DrSc. Department of Surface and Plasma Science Abstract: Presented is the study of recombination of ions with electrons performed at low temperatures using the Flowing afterglow with Langmuir probe experimental technique. Studied was the dissociative recombination of H and D ions at temperatures 77 - 300 K. Apart from a two-body also a three-body recombination channel assisted by neutral He atoms was identified and studied. The obtained temperature dependence of the two-body recombination rate coefficient is in a good agreement with findings of other experimental and theoretical works. The dissociative recombination of HCO and DCO ions with electrons was studied in the temperature range 150 - 300 K. The observed temperature dependence of measured recombination rate coefficient for HCO and DCO ions (~T -1.3 and ~T -1.1 , respectively) is in agreement with the majority of previous experimental works and evokes that indirect mechanism governs the recombination process. The electron- assisted collisional-radiative recombination of Ar ions was for the first time studied at temperatures 50 - 300 K. The...
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