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Enhanced growth rate of diamond films at low temperature in focused microwave plasma system
Babčenko, Oleg ; Bydžovská, Irena ; Fait, Jan ; Shagieva, Ekaterina ; Ondič, Lukáš ; Kromka, Alexander
The low temperature (< 500 °C) diamond film deposition on fused silica in two different focused microwave plasma systems, i.e. a multimode clamshell cavity (MCC) and a rotational ellipsoid cavity (REC) reactor, was investigated. During the experiments, the methane to hydrogen ratio, in the hydrogen-rich process gas mixture, varied from 1 % to 15 % for MCC and from 1 % to 9 % for REC. The grown films were analyzed by scanning electron microscopy and Raman shift measurements. The outcomes of the study and enhanced diamond growth at low temperatures is advantageous for overcoating of fused silica as well as thermally sensitive substrates, e.g. optical elements, photonic crystals, sensors, etc.
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