Home > Search Results: Pikna, Štěpán
Search:
Search Tips :: Advanced Search
Search collections:
Sort by: Display results: Output format:
National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
GaN deposition on a tungsten substrate
 Pikna, Štěpán ; Piastek, Jakub (referee) ; Čalkovský, Vojtěch (advisor)
This bachelor thesis is focused on deposition of GaN nanocrystals on the etched tungsten tips. Motivation was to prepare these GaN structures on the Schottky cathode made by company ThermoFisher Scientific and measure its field emission. In the theoretical part of the thesis GaN and tungsten field emission properties are introduced. The experimental part begins with tungsten tip etching optimalization, where the right values for best tips are temperature 20 °C, depth of the tip 2,5 mm and solution NaOH used. Further the gallium structures were prepared on these tips using molecular beam epitaxy (MBE). The right temperature to prepare GaN nanocrystals was determined as 200 °C. The deposition of gallium was set to 2 hours and following nitridation was 3 hours. Finally, the field emission from GaN prepared on copper foil with graphene was measured and compared with other experiments.
Detailed record
GaN deposition on a tungsten substrate
 Pikna, Štěpán ; Piastek, Jakub (referee) ; Čalkovský, Vojtěch (advisor)
This bachelor thesis is focused on deposition of GaN nanocrystals on the etched tungsten tips. Motivation was to prepare these GaN structures on the Schottky cathode made by company ThermoFisher Scientific and measure its field emission. In the theoretical part of the thesis GaN and tungsten field emission properties are introduced. The experimental part begins with tungsten tip etching optimalization, where the right values for best tips are temperature 20 °C, depth of the tip 2,5 mm and solution NaOH used. Further the gallium structures were prepared on these tips using molecular beam epitaxy (MBE). The right temperature to prepare GaN nanocrystals was determined as 200 °C. The deposition of gallium was set to 2 hours and following nitridation was 3 hours. Finally, the field emission from GaN prepared on copper foil with graphene was measured and compared with other experiments.
Detailed record

Interested in being notified about new results for this query?
Subscribe to the RSS feed.
Digital Repository :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.2
Maintained by admin.invenio@techlib.cz
This site is also available in the following languages:
Česky  English