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Photoluminiscence study of thin layers of MoS2
Kuba, Jakub ; Kunc,, Jan (referee) ; Bartoš, Miroslav (advisor)
The thesis deals with study of thin layers of transition metal dichalcogenides, especially of molybdenum disulfide. Nanostructures were fabricated on two-dimensional crystals of MoS2 and WSe2. Within followed analysis attention was paid to the photoluminescence properties. In the thesis transition metal dichalcogenides are reviewed and description of the modified process of preparation by micromechanical exfoliation is given.
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Passivation of germanium surface using ALD
Kuba, Jakub ; Polčák, Josef (referee) ; Kolíbal, Miroslav (advisor)
The thesis deals with passivation of germanium surfaces by chemical etching and atomic layer deposition (ALD). Attention was paid to the rate of oxidation of germanium surfaces after selected passivation methods and the composition of the germanium suboxides. In the thesis selected methods for germanium oxide removal are reviewed and a brief description of the methods used for analysis (XPS) and thin film deposition (ALD) is given.
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Photoluminiscence study of thin layers of MoS2
Kuba, Jakub ; Kunc,, Jan (referee) ; Bartoš, Miroslav (advisor)
The thesis deals with study of thin layers of transition metal dichalcogenides, especially of molybdenum disulfide. Nanostructures were fabricated on two-dimensional crystals of MoS2 and WSe2. Within followed analysis attention was paid to the photoluminescence properties. In the thesis transition metal dichalcogenides are reviewed and description of the modified process of preparation by micromechanical exfoliation is given.
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|
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Passivation of germanium surface using ALD
Kuba, Jakub ; Polčák, Josef (referee) ; Kolíbal, Miroslav (advisor)
The thesis deals with passivation of germanium surfaces by chemical etching and atomic layer deposition (ALD). Attention was paid to the rate of oxidation of germanium surfaces after selected passivation methods and the composition of the germanium suboxides. In the thesis selected methods for germanium oxide removal are reviewed and a brief description of the methods used for analysis (XPS) and thin film deposition (ALD) is given.
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