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Selective gallium nitride thin-film growth on substrates covered by pyrolyzed resist mask
Novák, Tomáš ; Kostelník, Petr (referee) ; Voborný, Stanislav (advisor)
This thesis deals with deposition of GaN thin films and GaN selective growth utilizing pyrolyzed resist masks. Carbon masks were prepared on silicon substrates by electron-beam litography and resist pyrolysis. As a further step, Ga and GaN were deposited on the masked substrates by Moleculer Beam Epitaxy (MBE) method. A selective growth of Ga droplets was achieved. These results were used for preparation of GaN crystallites by pulse deposition. It is also shown that direct MBE deposition of GaN on the masked substrates leads to a selective growth of GaN thin films with GaN film growing only on the areas which are not covered by the carbon mask. The results are explained by enhanced surface diffusion of gallium atoms on the surface of the carbon mask.
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Fabrication of the STM tips - static and dynamic etching method
Jonner, Jakub ; Spousta, Jiří (referee) ; Kostelník, Petr (advisor)
This bachelor thesis deals with the static and dynamic method of electrochemical etching way of fabrication tips for Scanning Tunneling Microscope (STM). This thesis describes basic principles of the mentioned methods and the construction solutions of the etching apparatuses. An extensive set of measurements was performed in order to obtain the main goal of the thesis – to determine the influence of various etching parameters on the process and final product. In case of static method, we used various concentrations of KOH solution, depths of plunge of the wolfram wire in to the etching solution and setpoints of the etching voltage. In case of dynamic method, we used also various concentrations of KOH solution and different settings of the etching solution flow rate and setpoints of the etching voltage. The ideal configuration of the etching parameters is presented at the end of the thesis as well with the comparison of the etching results from both of the eching methods.
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Selective gallium nitride thin-film growth on substrates covered by pyrolyzed resist mask
Novák, Tomáš ; Kostelník, Petr (referee) ; Voborný, Stanislav (advisor)
This thesis deals with deposition of GaN thin films and GaN selective growth utilizing pyrolyzed resist masks. Carbon masks were prepared on silicon substrates by electron-beam litography and resist pyrolysis. As a further step, Ga and GaN were deposited on the masked substrates by Moleculer Beam Epitaxy (MBE) method. A selective growth of Ga droplets was achieved. These results were used for preparation of GaN crystallites by pulse deposition. It is also shown that direct MBE deposition of GaN on the masked substrates leads to a selective growth of GaN thin films with GaN film growing only on the areas which are not covered by the carbon mask. The results are explained by enhanced surface diffusion of gallium atoms on the surface of the carbon mask.
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Fabrication of the STM tips - static and dynamic etching method
Jonner, Jakub ; Spousta, Jiří (referee) ; Kostelník, Petr (advisor)
This bachelor thesis deals with the static and dynamic method of electrochemical etching way of fabrication tips for Scanning Tunneling Microscope (STM). This thesis describes basic principles of the mentioned methods and the construction solutions of the etching apparatuses. An extensive set of measurements was performed in order to obtain the main goal of the thesis – to determine the influence of various etching parameters on the process and final product. In case of static method, we used various concentrations of KOH solution, depths of plunge of the wolfram wire in to the etching solution and setpoints of the etching voltage. In case of dynamic method, we used also various concentrations of KOH solution and different settings of the etching solution flow rate and setpoints of the etching voltage. The ideal configuration of the etching parameters is presented at the end of the thesis as well with the comparison of the etching results from both of the eching methods.
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