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Structural defects in II-VI semiconductors
Šedivý, Lukáš ; Belas, Eduard (advisor)
Title: Structural defects in II-VI semiconductors Author: Lukáš Šedivý Department: Institute of Physics of Charles University Supervisor: Doc. Ing. Eduard Belas, CSc., Institute of Physics, Faculty of Mathematics and Physics, Charles University Abstract: The single crystalline CdTe doped by chlorine is an excellent material for man- ufacturing x-ray and gamma-ray room-temperature semiconductor detectors thanks to the large linear attenuation coefficient, the possibility to make it high-resistive at the room temperature, and good electron mobility and the lifetime. This thesis aimed to examine the effect of annealing in well-defined ambient component pressure, Cd or Te, on the crys- tal's defect structure. The first experimental is devoted to eliminating the second phase defects - inclusions - present in CdTe : Cl, which significantly decay the crystal quality and detection performance. The following experimental parts are focused on the detailed inves- tigation of the point defect structure of CdTe : Cl. The annealing interval bisection method for reaching high resistivity material is introduced. The equilibrium defect structure is in- vestigated using the in-situ high-temperature Hall effect measurements. The results are interpreted through an advanced model of the defect structure considering also dissocia-...
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