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Tvorba kontrastu při zobrazení dopovaného polovodiče v nízkoenergiovém REM
Mika, Filip ; Frank, Luděk
Functional details of semiconductor structures keep decreasing in size. Among the structure elements the locally doped patterns play crucial role so that tools are needed for their observation. For fast diagnosis and quality check of the semiconductor structures the scanning electron microscope is useful because of its wide range of magnification, availability of different signal modes, speed of data acquisition and nondestructive nature of the technique in general, especially at low voltage operations. The dopant concentration in semiconductor is quantitatively determined via acquisition of signal of the secondary electron (SE) emission in such a way that the image contrast is measured between areas of different type or rate of doping

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