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Morphology and physical properties of misfit layer compound "VPbS3 "
 Tetalová, Kateřina ; Uhlířová, Klára (advisor) ; Kúš, Peter (referee)
The subject of this bachelor thesis is the research on the morphology and physical properties of the misfit layer compound VPbS3. The main part of the work was the study of the sample cleaved surface. We focused on chemical stability, the to- pography of the cleaved surface, the depths of cleaved artefacts and the influence of the structure of the cleaved surface on the exfoliation of the thin layers. We exfoliated the sample to two substrates - Si/SiOx/5 nm Au a Si/300 nm SiOx - to compare adhesion. We also measured the temperature dependence of the electrical resistance of the material VPbS3. Within the work were used and compared three microscope methods - optical microscopy, scanning electron microscopy and atomic force microscopy. Marginally we also focused on the growth of the crystals VPbS3 and verified their composition. From the perspective of the AFM, the sample VPbS3 is chemically stable. We managed to exfoliate a layer with a thickness of 1,9 nm to the Si/300 nm SiOx substrate and with a thickness of 0,8 nm to the Si/SiOx/5 nm Au substrate. Following the previous measurement, the electric resistivity measu- rement reports semiconducting behaviour. 1
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