Název:
Imaging of dopants under presence of surface ad-layers
Autoři:
Mika, Filip ; Hovorka, Miloš ; Frank, Luděk Typ dokumentu: Příspěvky z konference Konference/Akce: International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./, Skalský dvůr (CZ), 2010-05-31 / 2010-06-04
Rok:
2010
Jazyk:
eng
Abstrakt: Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast between differently doped areas is observable in the secondary electron emission. Quantitative relation exists between the image contrast and the dopant concentration. However, further examination has shown the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of ad-layers on the semiconductor surface.
Klíčová slova:
dopant concentration; image contrast; scanning electron microscopy; secondary electron emission; semiconductor structures Číslo projektu: CEZ:AV0Z20650511 (CEP), GP102/09/P543 (CEP) Poskytovatel projektu: GA ČR Zdrojový dokument: Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation, ISBN 978-80-254-6842-5
Instituce: Ústav přístrojové techniky AV ČR
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Informace o dostupnosti dokumentu:
Dokument je dostupný v příslušném ústavu Akademie věd ČR. Původní záznam: http://hdl.handle.net/11104/0190604