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Submicron Structures with Deep Relief — Technology of Preparation
Matějka, Milan ; Kuřitka,, Ivo (referee) ; Mgr. Petr Klapetek Ph.D (referee) ; Kolařík, Vladimír (advisor)
The dissertation thesis is focused on research and development in the field of microfabrication by the technology of electron beam lithography. In the first part of this work, the extensive study is conducted in the field of technology of electron beam lithography in terms of physical principles, writing strategies and resist materials. This is followed with description of physical principles of etching for the transfer of relief structures into substrates. The thesis describes innovative techniques in modelling, simulation, data preparation and optimization of manufacturing technology. It brings new possibilities to record deep binary or multilevel microstructures using electron beam lithography, plasma and reactive ion etching technology. Experience and knowledge in the large area of microlithography, plasma and anisotropic wet-etching of silicon have been capitalized to the design process of manufacturing of nano-patterned membranes. It was followed with practical verification and optimization of the microfabrication process.
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SMV-2023-06: Development of test specimens for SEM
Matějka, Milan ; Krátký, Stanislav ; Meluzín, Petr ; Košelová, Zuzana ; Chlumská, Jana ; Horáček, Miroslav ; Kolařík, Vladimír ; Knápek, Alexandr
The study focuses on the research and development of precise calibration samples featuring relief structures. These samples are designed for calibrating parameters in scanning electron microscopes (SEM). The testing patterns enable the verification and calibration of magnification, orthogonality, and geometric distortion. The preparation of calibration specimens utilizes micro lithographic techniques tailored for silicon processing and other relevant technological procedures.
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SMV-2023-05: DI2023
Matějka, Milan ; Krátký, Stanislav ; Meluzín, Petr ; Košelová, Zuzana ; Chlumská, Jana ; Horáček, Miroslav ; Kolařík, Vladimír ; Knápek, Alexandr
The research focuses on the investigation and development of precise calibration samples with relief structures. These samples are designed for calibrating parameters in scanning electron microscopes (SEM). Test patterns allow verification of the imaging quality through microscopic techniques such as overall magnification, field of view size, resolution, deformation in lateral axes, and other geometric distortions. Precision lithographic techniques and other methods derived from silicon processing technologies in the semiconductor industry are employed for sample preparation. The development has been directed towards optimizing the recording of etching masks before transferring the image onto a monocrystalline silicon substrate.
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SMV-2021-03: Development of test specimens for SEM
Matějka, Milan ; Horáček, Miroslav ; Chlumská, Jana ; Kolařík, Vladimír ; Krátký, Stanislav
Research and development of accurate calibration samples with relief structures. The samples are intended for parameter calibration of scanning electron microscope (SEM). Testing patterns allow to check and calibrate magnification, orthogonality and geometric distortion. New tools for handling during technological operations of resist deposition and etching were developed. Optimization was reached in the process of transfer of the relief structure into silicon via anisotropic etching, due modification of etching apparatus. Standardized procedures for inspection and quality control were developed.
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Silver catalysed nanoscale silicon etching in water vapour
Křížek, Filip ; Pikna, Peter ; Fejfar, Antonín
N+-doped silicon substrates were etched by water vapour under the silver nanoparticles acting as a catalyst. Thin silver layer was deposited on two silicon wafers, where one of them was thermally annealed in nitrogen to create silver nanoparticles. Subsequently, both samples were annealed in water vapour and afterwards analysed by Scanning Electron Microscope. The images have shown that the annealed silver nanoparticles burrowed into the silicon substrate in the case of both samples. This new method of silicon etching introduces an alternative way of manufacturing nanohole arrays in silicon substrates.\n
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