National Repository of Grey Literature 23 records found  1 - 10nextend  jump to record: Search took 0.00 seconds. 
Optical fibre dosimeter
Jelínek, Michal ; Mikel, Břetislav
In the nuclear facility, there is currently a demand for optical methods of measuring gamma radiation. For these measurements, we need very robust measurement methods and sophisticated equipment. Silica optical fibres coupled to crystal scintillators are suitable and we present results from their implementation. The scintillators detect gamma radiation and the silica optical fibres transmit the scintillation light from the scintillator to the detector. We used commercially available silica optical fibres up to 1.5 mm in diameter with different numerical apertures to transmit visible light from the scintillators to the detector.
Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor) ; Čuba, Václav (referee) ; Pejchal, Jan (referee)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
Optical properties of thin film scintillators
Onderišinová, Zuzana
In the present work we studied Pr, Sc co-doped and Eu-doped Lu3Al5O12 thin epitaxial garnet layers prepared by liquid phase epitaxy (LPE) on Y3Al5O12 (YAG) and Lu3Al5O12 (LuAG) single crystalline substrates. In the process of growth BaO - BaF2 - B203 (Pr, Sc co - doped layers) and PbO - B2O3 (Eu - doped layers) fluxes were used. These materials are considered perspective scintillators with high density, fast scintillation response, high quantum efficiency and good chemical and mechanical stability. They are used in a number of applications in which high spatial resolution is required. The absorption, emission and excitation spectra of experimental samples were measured and investigated. Our attention was focused especially on the study of influence of Sc3+ ions on the emission properties of Pr3+ ions in epitaxial layers which mutually contain various amounts of concentrations of dopants. The Sc3+ ions do not show any radiative transitions in visible and UV spectral regions, but they increase the scintillation response of Pr3+ ions. This phenomenon is caused by overlappig of the Sc-related emission around 275 nm with the 4f-5d absorption band of Pr3+ centers. By measurement of radioluminescence this energy transfer from Sc3+ to Pr3+ activator centres was confirmed.
Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE
Vaněk, Tomáš ; Hubáček, Tomáš ; Hájek, František ; Dominec, Filip ; Pangrác, Jiří ; Kuldová, Karla ; Oswald, Jiří ; Hospodková, Alice
Light extraction (LE) efficiency of GaN buffer layer was studied by angle-resolved photoluminescence. We measured enhancement of light extraction efficiency (LEE) up to 154% by introducing the SiNx layer atop the GaN buffer and subsequent GaN light extraction layer (LEL) overgrowth. Morphological properties of GaN.
Optimization of scintillation detector for detection of low energy signal electrons in electron microscopy
Tihlaříková, Eva ; Kadlec, Jaromír (referee) ; Uruba, Václav (referee) ; Neděla, Vilém (advisor)
The dissertation thesis deals with optimization of the scintillation detector for efficient detection of low energy signal electrons in a specimen chamber of a scanning electron microscope. The solution was based on the study of signal electron energy loss mechanisms during their interaction with a conductive layer and a scintillator that can be studied using simulations based on the stochastics Monte Carlo methods. Based on test simulations and their comparison with experimental data, the ideal Monte Carlo software was chosen and used for the study of signal electron energy losses during their transport through the conductive layer as well as following interaction with scintillator, in dependency on the signal electron energy. Simulation results allowed to define criteria for the optimization of the conductive layer. According to these parameters, the optimized layers were deposited on the surface of different scintillators and experimentally tested in the scintillation detector of the scanning electron microscope. Experimental measurements allowed to verify accomplished simulations and provide new information about impact of materials and thicknesses of conductive layers in combination with materials of scintillators and light guides. The increase of the detection efficiency of the scintillation detector equipped with optimised conductive layers and its capability to detect low energy signal electrons were experimentally proved.
Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor) ; Čuba, Václav (referee) ; Pejchal, Jan (referee)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
Oxide scintillator detectors
Lučeničová, Zuzana ; Kučera, Miroslav (advisor) ; Bryknar, Zdeněk (referee) ; Mihóková, Eva (referee)
The presented thesis focused on the study of a new material concept of Ce3+ doped multicom- ponent aluminum garnets (GdLu)3(GaAl)5O12. High purity single crystalline epitaxial films were grown by the method of liquid phase epitaxy from the BaO-B2O3-BaF2 flux with spe- cial emphasis on the elimination of the potential impurities coming from the flux. Combined experimental study of photoelectron yield (under alpha excitation), decay kinetics of fast and delayed recombination in the milisecond time range (under e-beam excitation) and photo-, cathodo- and radio-luminescence spectroscopies were used to characterize the studied mater- ial. The single-step nonradiative energy transfer from the donor Gd3+ to an acceptor Ce3+ was observed in the low Gd, Ce doped LuAG films and established as long-range dipole - dipole interaction. Special attention was devoted to the positive effect of combined Gd and Ga substitution on the extensive suppression of shallow traps, which are responsible for the slow component in the scintillation response. The best obtained scintillation characteristics of the studied epitaxial films were comparable with the top performance bulk crystals. 1
Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
Optical properties of thin film scintillators
Onderišinová, Zuzana
In the present work we studied Pr, Sc co-doped and Eu-doped Lu3Al5O12 thin epitaxial garnet layers prepared by liquid phase epitaxy (LPE) on Y3Al5O12 (YAG) and Lu3Al5O12 (LuAG) single crystalline substrates. In the process of growth BaO - BaF2 - B203 (Pr, Sc co - doped layers) and PbO - B2O3 (Eu - doped layers) fluxes were used. These materials are considered perspective scintillators with high density, fast scintillation response, high quantum efficiency and good chemical and mechanical stability. They are used in a number of applications in which high spatial resolution is required. The absorption, emission and excitation spectra of experimental samples were measured and investigated. Our attention was focused especially on the study of influence of Sc3+ ions on the emission properties of Pr3+ ions in epitaxial layers which mutually contain various amounts of concentrations of dopants. The Sc3+ ions do not show any radiative transitions in visible and UV spectral regions, but they increase the scintillation response of Pr3+ ions. This phenomenon is caused by overlappig of the Sc-related emission around 275 nm with the 4f-5d absorption band of Pr3+ centers. By measurement of radioluminescence this energy transfer from Sc3+ to Pr3+ activator centres was confirmed.

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