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Sequential growth of GaN nanocrystals on SiO2 substrate modified by FIB method
Flajšmanová, Jana ; Voborný, Stanislav (referee) ; Mach, Jindřich (advisor)
This bachelor's thesis deals with the selective growth of gallium (Ga) and gallium nitride (GaN). In theoretical part, there is a brief description of growth of ultrathin films with respect to GaN and their manufacturing. Experimental part is aimed to the deposition of Ga and GaN on silicon substrates Si(1 1 1). Substrates with the native silicon dioxide layer (SiO2) were modified by focused ion beam (FIB). GaN was deposited by pulsed deposition followed by postnitridation. Prepared samples were studied by atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM).
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Growth ultrathin of layers Au
Beránek, Jiří ; Kolíbal, Miroslav (referee) ; Mach, Jindřich (advisor)
The aim of this thesis is to study growth of ultrathin gold layers prepared by MBE (Molecular beam epitaxy) in UHV conditions. Differently modified sillicon served as a substrate and depositions were done at different temperatures of a substrate. Samples were analyzed by ToF LEIS for thickness, morfology was examined by SEM and AFM. X-ray photoelectron spectra were taken for chemical analysis. Gathered data together with their evaluation contribute to description and understanding of some processes during deposition and subsequent exposure of the sample to high temperatures. Experimental data and conslusions also prowide basis for further experiments and development of potential applications.
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Preparation of graphene samples for experiments under UHV conditions
Mareček, David ; Mach, Jindřich (referee) ; Čechal, Jan (advisor)
This bachelor thesis deals with electrical conductivity of a graphene sample and preparation of a graphene field-effect transistor. In the theoretical part of the thesis, we describe electronic properties of graphene, preparation of graphene by CVD and its transfer to SiO_2. Experimental part of this thesis is focused on the preparation of a graphene field-effect transistor with long distance between Source and Drain electrodes. Thesis deals with a design of a chip expander for contact of graphene in UHV conditions. The last part describes measurement of dependency of graphene layer conductivity on the gate voltage with emphasis on the position of Dirac point during adjustments of the sample in UHV conditions.
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Preparation and analysis of nanostructures in UHV conditions
Gloss, Jonáš ; Spousta, Jiří (referee) ; Mach, Jindřich (advisor)
Cílem této bakalářské práce bylo skoumání přípravy a analýzy nanostruktur v podmínkách vysokého vakua (VV). Teoretická část klade důraz na gallium nitridové (GaN) nanostruktury. Ty pak byly analyzovány rastrovacím tunelovacím mikroskopem (RTM). Aby bylo možné analyzovat připravené vzorky ve VV RTM, bylo provedeno elektrochemické leptání wolfrámového drátu. Tato práce zhrnuje postup k vytvoření wolfrámových hrotů pro RTM. Kapitola o výrobě wolfrámových hrotů zahrnuje popis princípu elektrochemického leptání. Obrázky vyleptaných hrotů byly provedeny pomocí rastrovacího elektronového mikroskopu. Zaostřování hrotů pak bylo vykonáno fokusovaným iontovým svazkem. V této práci je také představena metoda pro opětovné ostření RTM hrotů elektronovým svazkem, vykonávaná in-situ. Bylo dokázáno, že je možné rutinně obdržet wolfrámové hroty s poloměrem křivosti rádovo v nanometrech.
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Design of the new type of thermal atomic source for oxygen atoms
Šikula, Marek ; Bábor, Petr (referee) ; Mach, Jindřich (advisor)
Ultrathin oxid layers (especially high-k layers) are studied and fabricated by using atomic oxygen sources. These high-k ultrathin layers are integrated into CMOS transistors and DRAM capacitors. In this thesis theory of atomic oxygen beams and ways of theirs creation is summarized. On the basis of the obtained knowledge the engineering design of a unique type of the thermal atomic oxygen source is created. The design was tested by simple experiments. The 3D model and complete engineering drawings are included.
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Testing of the new UHV scanning electron microscope and design of its effusion cel
Šárközi, Rudolf ; Mach, Jindřich (referee) ; Bábor, Petr (advisor)
This work focus on the development and the design of the effusion cell that is able to deposit different materials in downward orientation. The Cell itself should be placed into the ultra-vacuum microscope (UHV-SEM) developed in TESCAN company in the collaboration with Institute of Physical Engineering. Theoretical part is devoted to the description of the electron microscope and its, in the future installed, parts, which will be used for the preparation and the analysis of the nanostructures. In this work, the first measurements with the electron microscope are presented, and the influence of mechanical vibrations to image quality is discussed.
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Optimization of the radiofrequency atomic source for deposition of GaN
Kern, Michal ; Wertheimer, Pavel (referee) ; Mach, Jindřich (advisor)
This thesis is focused on construction and optimization of radiofrequency atomic dissociation source of atomic nitrogen for depostion of GaN. The theoretical part deals with atomic sources, growth of ultrathin layers and the issue of radiofrequency circuits, with emphasis on their design using Smith chart. Methods for synthesis of GaN ultrathin layers and deposition are also discussed. In the experimental part, design and realization of various congurations of the impedance matching network is described. Using the impedance matching network a nitrogen plasma discharge was successfuly created and its spectrum was analysed. Afterwards, design and realization of a stepper motor control for the impedance matching network is described.
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Deposition of GaN nanocrystals with Ga droplets
Novák, Jakub ; Voborný, Stanislav (referee) ; Mach, Jindřich (advisor)
This bachelor thesis deals with preparation and characterization of Ga structures and GaN nanocrystals. In the theoretical part, properties and applications of GaN are introduced. Further, some substrates for the growth and some techniques used for manufacturing of these structures are stated. Further, is also mentioned the photoluminiscence of GaN. The experimental part deals with preparation of Ga and GaN structures and combination of both. These structures were further analyzed by various methods such as XPS, SEM or photoluminiscence.
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CVD graphene sensor of relative humidity measured in ambient and high vacuum conditions
Urbiš, Jakub ; Mach, Jindřich (referee) ; Bartošík, Miroslav (advisor)
This bachelor thesis deals with the utilization of graphene as a gas sensor and the effect of gate voltage on sensor sensitivity change. The first part summarizes knowledge about graphene as a sensor of hydrogen, oxygen and water. The experimental part was devoted to measuring and comparing resistance variation in dependence on ambient humidity for pure graphene, graphene-modified by Ar+ ions and Ga-coated graphene. Another experiment dealt with the rate at which the resistance of graphene was stabilized after an application of gate voltage. The last part deals with the environmental chamber.
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