|
| |
|
|
Deposition of Ga nanostructures on graphene membranes
Severa, Jiří ; Mikulík, Petr (referee) ; Mach, Jindřich (advisor)
This diploma thesis deals with the preparation of the graphene membranes for depo-sition of gallium atoms by the molecular beam epitaxy. In the first part properties ofgraphene and methods of its production are described. Second part focuses on the gra-phene membranes, their specific properties, applications and methods of production. Thirdpart describes growth theory of the thin films. Practical part is focused on preparationof graphene membranes, which consists of covering the holes in the silicon substrate bygraphene layer. For that mechanical exfoliated and chemical vapor deposited graphenewere used. Subsequently, gallium atoms were deposited on these membranes by molecularbeam epitaxy and in situ observed by scanning electron microscopy.
|
|
|
Schottky solar cells with interface graphene/Si modified by gallium
Hlavička, Ivo ; Lišková, Zuzana (referee) ; Mach, Jindřich (advisor)
Main focus of this bachelor thesis is on fabrication, characterization and modification of graphene-on-silicon Schottky solar cells. By transfering CVD graphene onto silicon wafer with electrodes, a basic Schottky junction was created. The junction was then modified by annealing in UHV chamber as well as by gallium deposition. Information about power conversion efficiency of such Schottky solar cells was then obtained by IV measurement. Schottky junction itself was analyzed using X-EBIC method.
|
|
|
The deposition of CaF2 ultrathin layers on graphene substrate
Caesar, Radek ; Nebojsa, Alois (referee) ; Mach, Jindřich (advisor)
This master’s thesis is focused on preparation and analysis of ultrathin CaF2 (calcium fluoride) films on a graphene substrate. CaF2 was deposited in UHV conditions at substrate temperatures in the range from 20 °C to 400 °C. The material was deposited on Si(111) with a native SiO2 layer and on a substrate with a CVD graphene layer. The deposited films were analyzed by XPS, AFM and SEM. Moreover four different sample holders for deposition purposes were designed in this work.
|
|
|
Design of the carbon atomic source for deposition of graphene in UHV
Čalkovský, Vojtěch ; Bábor, Petr (referee) ; Mach, Jindřich (advisor)
This bachelor's thesis deals with the design of the atomic carbon source for deposition of graphene layers in UHV conditions. In the first part are briefly described the problems of epitaxial growth, the theory of atomic beams and theory of sublimation. The second part is aimed on graphene description, namely on his properties and on the growth of graphene layers, especially by molecular beam epitaxy. The third part contains brief description of detection and analysis methods of carbon atomic beams. In the practical part of this bachelor's thesis the design and the numeric calculations were made in Simion 8.0 and EOD program. Afterwards the atomic carbon source was constructed. In the conclusion are discussed the obtained results.
|
|
| |
|
|
Optimization of ion source with saddle field
Zálešák, Marek ; Voborný, Stanislav (referee) ; Mach, Jindřich (advisor)
The goal of my bachelor's thesis was to make literature search about ion source applications. The next goal was to create models of saddle field ion source and find the best settings of the ion source. At first the most necessary changes were made to make the ion source operational. Then the deflection optics was developed that cause a deviation of the beam from the geometric axis of the ion source.
|
|
|
UV detection by Grafen/GaN structures
Kostka, Marek ; Piastek, Jakub (referee) ; Mach, Jindřich (advisor)
This bachelor thesis covers fabrication as well as the study of behavior of UV sensor based on galium nitride structures on graphene substrate. The sensor takes advantage of high mobility of charge carriers in graphene and UV selective sensitivity of GaN nanoctystals. This combination exhibits a potential for being a UV sensor because of the unique properties brought by both materials. The first part of this work describes graphene, galium nitride and graphene/GaN heterostructure with their properties and fabrication processes. The second part includes full description of already used fabrication process and characterization of the optical and electrical behavior using photoluminiscence and transport properties measurements.
|
|
|
Development of Atomic- and Ion Beam Sources
Šamořil, Tomáš ; Lencová, Bohumila (referee) ; Mach, Jindřich (advisor)
The objective of this master thesis was to provide the optimization of an ion-atom beam source for the improvement of its properties. The improvement of the parameters increases the efficiency of the source during the deposition of gallium nitride ultrathin films (GaN) being important in microeletronics and optoelectronics. After optimization, the depositions of GaN ultrathin films on Si(111) 7x7 at lower temperatures (
|
|
| |
guest ::
RSS feed.