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National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
Terahertz conductivity of charge carriers in semiconductors
 Hendrych, Erik ; Kužel, Petr (advisor) ; Nádvorník, Lukáš (referee)
In this thesis, we investigate the conductivity spectra of samples of weakly doped gal- lium arsenide in the terahertz region as a function of temperature. These are silicon-doped gallium arsenide of type N and zinc-doped gallium arsenide of type P. The temperature dependence in the terahertz region for these materials has not yet been described in the literature. We observe conductivity maxima corresponding to the admixture energies in the forbidden band. We use the Drude-Lorentz model to process the data. We achieve a good fit of the measured data. The carrier concentration at room temperature corre- sponds to the nominal value. The relaxation time and high-frequency permittivity match the tabulated values. The oscillator frequency for the N type approximately matches the admixture energy. For the P type, this value is outside the measured range and only the rise to this maximum is seen. 1
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Terahertz radiation in nanostructures
 Hendrych, Erik ; Ostatnický, Tomáš (advisor) ; Kozák, Martin (referee)
We explore conductivity of nanostructures in the terahertz range. We model the nanostructure as a square potential well with a barrier inside. We examine how the conductivity depends on temperature, material constants and dimensions of the potential well. The conductivity of the material determines the complex refractive index and thus influences its optical properties such as reflexivity, transmittance and attenuation coefficient. We construct the functional dependency of the conductivity on the electric field frequency. The maxima of this functional dependency correspond to spectral lines. We examined the dependency of the frequencies of the maxima (spectral lines) on various parameters. We got the most interesting result when we continuously changed the position of the barrier inside the potential well. For different heights of the barrier we got qualitatively different results. With high barrier the system behaves as two separate potential wells where we can see monotonous functional dependency of the spectral lines on the position of the barrier. With low potential barrier we get oscillating dependencies. For gallium arsenide and 2 nm width of the potential barrier, high barrier is higher than 1 eV, while low barrier is lower than 0, 05 eV.
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