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Ultrafast response of electrons in nanostructured and disordered semiconductor systems studied by time-resolved terahertz spectroscopy
Zajac, Vít ; Kužel, Petr (advisor) ; Lloyd-Hughes, James (referee) ; Ostatnický, Tomáš (referee)
of Doctoral Thesis Title: Ultrafast response of electrons in nanostructured and disordered semiconductor systems studied by time-resolved terahertz spectroscopy Author: Vít Zajac Department / Institute: Institute of Physics of the Czech Academy of Sciences Supervisor of the doctoral thesis: doc. RNDr. Petr Kužel, Ph.D., Institute of Physics of the Czech Academy of Sciences Abstract: This thesis deals with charge transport in semiconducting nanomaterials on the picosecond time scale studied by time-resolved terahertz spectroscopy. The problematics of the effective response of composite materials is reviewed and the VBD effective medium model is formulated. The wave equation for the THz probing pulse propagating through inhomogeneously excited percolated and non-percolated semiconducting nanomaterials is solved. This theory is used to investigate charge transport in samples of nanoporous-Si-derived nanocrystals and in epitaxial Si nanocrystal superlattices. The experimental spectra are successfully modeled with the use of Monte Carlo calculations of charge carrier mobility in nanocrystals of corresponding sizes and degrees of percolation within the VBD approximation. It is found that nanocrystals from different regions of the nanocrystal size distribution of the sample dominate the signal in THz and...
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Defects limiting charge collection in semiinsulated CdZnTe
Zajac, Vít ; Franc, Jan (advisor) ; Šikula, Josef (referee)
Title: Defects limiting charge collection in semiinsulated CdZnTe Author: Vít Zajac Department: Institute of Physics of Charles University Supervisor: doc. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: We achieved to detect photoluminescence transitions deep in the band gap in 4 samples cut from 2 different crystals of semiinsulating Cd1-xZnxTe (x = 0,02 - 0,18) in a row of points along the growth axis. The spectral peaks give evidence of the presence of deep levels in the sample and the intensity of the photoluminescence peaks is to a certain extent proportional to the concentration of these levels. A comparison between resistivity and photoconductivity that were measured by a contact-less method showed that the change of photoluminescence intensity of deep levels does not bring about an unambigous change of neither resistivity nor photoconductivity. Correlation analysis of resistivity and photoconductivity of 6 samples from 4 different crystals confirmed the following model: A shift of the Fermi level within the band gap induced by a change of donor-acceptor compensation is accompanied by an unambigous change of resistivity and results in a change in occupation of the deep levels. This causes a change in the photoconductivity of the crystal because the occupation factor of...
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