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Determination of absolute quantum yield of luminescence
Smísitel, Petr ; Valenta, Jan (advisor) ; Herynková, Kateřina (referee)
In this bachelor thesis we will study the determination of absolute quantum yields (efficiency) of photoluminiscence, which is equal to the ratio of number of emitted photons and number of absorbed photons. The common approach is to compare the absorption and luminescence spectrum. The main experimental problem is to eliminate the influence of angular dependence of reflection, emission and scattering. Therefore it is convenient to use the integrating sphere which eliminate most of the problems of relative measurements of quantum yield. In detail we will describe the method to determine the quantum yields of luminescence using the integrating sphere including the description of the experimental equipment and the procedure of processing data and estimation of uncertainty. Finally, we apply the procedure to solid and liquid samples containing silicon nanocrystals. We will measure the dependence of quantum yields on the applied excitation wavelength. 1
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Ultrafast laser spectroscopy of semiconductor nanostructures
Neudert, Karel ; Trojánek, František (advisor) ; Nikl, Martin (referee) ; Herynková, Kateřina (referee)
This doctoral thesis deals with analysis of carrier dynamics in semiconductor nanocrystals and nanostructures by methods of ultrafast laser spectroscopy. In three chapters silicon, InAs/GaAs, InAs/AlAs and CdSSe materials are studied. Silicon nanocrystals prepared by sol-gel method were measured by time-resolved luminescence method with various time resolutions, two-photon absorption and Z-scan method. A model describing findings was suggested. InAs was well measured by upconversion method and gained knowledge appeared to be fully consistent with quantum model. CdSe material was examined in two basic forms - thin films of nanocrystals prepared by chemical deposition and nanocrystals in comercial filters. In both cases all questions regarding influencing optical properties of nanocrystals by modification of their growth were answered.
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Study of optical nonlinearities in semiconductors and semiconductor nanostructures
Chlouba, Tomáš ; Trojánek, František (advisor) ; Filip, Radim (referee) ; Herynková, Kateřina (referee)
In the main part of this thesis I study the relaxation mechanisms of charge carriers in silicon nanocrystals in SiO2 matrix. One of the potential applications of these structures lies in photovoltaics, specifically in construction of all-silicon tandem solar cells. I studied the dynamics of carriers in these structures by methods of ultrafast spectroscopy which helped to unravel the microscopic behaviour of carriers, their transport, localization etc. Furthermore I investigated the doping of such structures as the technology of doping is crucial for manufacture of pn- junctions which are the core component of solar cells. At the end I delve into the dissipative Jaynes-Cummings model by mathematical modeling and theoretical calculations which describes among others microlasers and as such comes under a field of cavity quantum electrodynamics.
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Ultrafast spectroscopy of hybrid nanosystems
Galář, Pavel ; Malý, Petr (advisor) ; Herynková, Kateřina (referee) ; Vrňata, Martin (referee)
Title: Ultrafast spectroscopy of hybrid nanosystems Author: RNDr. Pavel Galář Department: Department of Chemical Physics and Optics Supervisor: prof. RNDr. Petr Malý, DrSc. Abstract: This Ph. D. thesis is focused on physical phenomena located at the interface of hybrid nanostructure composed of polycrystalline diamond and polymer polypyrrole. The main method used in our experimental study was ultrafast laser spectroscopy that allowed us to gain new findings about electron recombination processes in polycrystalline diamond layers, polypyrrole and in their hybrid structures. The research was focused on mutual influence of both components, especially through energy and charge transfer. In the first step of our research we carried out optical characterisation of different kinds of polypyrrole and complex study of recombination processes dynamics of photoexcited charge carriers in polycrystalline diamond. The measurements were realized by the methods of time-resolved photoluminescence and transmission spectroscopy in the time scale from picoseconds to milliseconds. On the basis of the obtained results the model explaining the origin of luminescence signal related to the different kinds of electron recombination processes in non- diamond phase and on surface defects of diamond grains in polycrystalline layers was...
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Study of optical nonlinearities in semiconductors and semiconductor nanostructures
Chlouba, Tomáš ; Trojánek, František (advisor) ; Filip, Radim (referee) ; Herynková, Kateřina (referee)
In the main part of this thesis I study the relaxation mechanisms of charge carriers in silicon nanocrystals in SiO2 matrix. One of the potential applications of these structures lies in photovoltaics, specifically in construction of all-silicon tandem solar cells. I studied the dynamics of carriers in these structures by methods of ultrafast spectroscopy which helped to unravel the microscopic behaviour of carriers, their transport, localization etc. Furthermore I investigated the doping of such structures as the technology of doping is crucial for manufacture of pn- junctions which are the core component of solar cells. At the end I delve into the dissipative Jaynes-Cummings model by mathematical modeling and theoretical calculations which describes among others microlasers and as such comes under a field of cavity quantum electrodynamics.
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MOVPE GaN/AlGaN HEMT nano-structures
Hulicius, Eduard ; Kuldová, Karla ; Hospodková, Alice ; Pangrác, Jiří ; Dominec, Filip ; Humlíček, J. ; Pelant, Ivan ; Cibulka, Ondřej ; Herynková, Kateřina
GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and micro-Raman spectroscopy.\n
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Determination of absolute quantum yield of luminescence
Smísitel, Petr ; Valenta, Jan (advisor) ; Herynková, Kateřina (referee)
In this bachelor thesis we will study the determination of absolute quantum yields (efficiency) of photoluminiscence, which is equal to the ratio of number of emitted photons and number of absorbed photons. The common approach is to compare the absorption and luminescence spectrum. The main experimental problem is to eliminate the influence of angular dependence of reflection, emission and scattering. Therefore it is convenient to use the integrating sphere which eliminate most of the problems of relative measurements of quantum yield. In detail we will describe the method to determine the quantum yields of luminescence using the integrating sphere including the description of the experimental equipment and the procedure of processing data and estimation of uncertainty. Finally, we apply the procedure to solid and liquid samples containing silicon nanocrystals. We will measure the dependence of quantum yields on the applied excitation wavelength. 1
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Development of sensors based on porous silicon
Vrkoslav, Vladimír ; Jelínek, Ivan (advisor) ; Mička, Zdeněk (referee) ; Herynková, Kateřina (referee) ; Volf, Radko (referee)
5 Conclusion PS samples with defined macroporous structure were prepared and they were used as sensing layer in PL chemical sensors' concentration dependence of pL quenching response of standard PS was measured ro,ío*orogical set of linear alcohols in gas and liquid phase. From oU*'""a *tl"l"tion' of quenching sensitivity with dielecnic constant and saturated vapour it""ut" in gas and liquid phases follolrs: r. :r _L^-a io .nnrrolled bv dielectric - PL quancbing response of PS in liquid phase is controlled by streng*r ofmlYta - PL quenching response of PS in gas phase is controlled more by equilibriumconcentrationofanalýeinsideporousmatrix.Dielectric strength of analýe is not so important. PSsurfaceswerefunctionalizedwithcobaltphthalocyanine, polypyrrole, permethyl-6r-heptenoylamino-6I-deoxy B-cyclodextrins' methyl-lO-undeceonate and by oxidation' (The work is focused on using the first three compounds') We performed a measurement of concentration dependence of PL sensor response functionalized PS samples for selected organic species in gas phase' We can conclude that the PL quenching.",pň," was modiťred by functionalization of PS with selected compounds, due to change of surface polarity and molecular recognition. The magnitude of sensor response modification is dependent on kind of anallte' Another...
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Ultrafast spectroscopy of hybrid nanosystems
Galář, Pavel ; Malý, Petr (advisor) ; Herynková, Kateřina (referee) ; Vrňata, Martin (referee)
Title: Ultrafast spectroscopy of hybrid nanosystems Author: RNDr. Pavel Galář Department: Department of Chemical Physics and Optics Supervisor: prof. RNDr. Petr Malý, DrSc. Abstract: This Ph. D. thesis is focused on physical phenomena located at the interface of hybrid nanostructure composed of polycrystalline diamond and polymer polypyrrole. The main method used in our experimental study was ultrafast laser spectroscopy that allowed us to gain new findings about electron recombination processes in polycrystalline diamond layers, polypyrrole and in their hybrid structures. The research was focused on mutual influence of both components, especially through energy and charge transfer. In the first step of our research we carried out optical characterisation of different kinds of polypyrrole and complex study of recombination processes dynamics of photoexcited charge carriers in polycrystalline diamond. The measurements were realized by the methods of time-resolved photoluminescence and transmission spectroscopy in the time scale from picoseconds to milliseconds. On the basis of the obtained results the model explaining the origin of luminescence signal related to the different kinds of electron recombination processes in non- diamond phase and on surface defects of diamond grains in polycrystalline layers was...
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