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Národní úložiště šedé literatury Nalezeno 2 záznamů.  Hledání trvalo 0.00 vteřin. 
Effect of the substrate crystalline orientation on the surface morphology and boron incorporation into epitaxial diamond layers
 Voves, J. ; Pošta, A. ; Davydova, Marina ; Laposa, A. ; Povolný, V. ; Hazdra, P. ; Lambert, Nicolas ; Sedláková, Silvia ; Mortet, Vincent
Epitaxial growth of diamond is critically important for the fabrication of diamond-based electronic devices. The emerging study of the epitaxial diamond growth on the (113) vicinal surfaces evidences highly needed high growth rates and low structural defects concentrations with both p- and n-type doping. In this work, we compare the morphology and dopant concentration incorporation of heavily boron-doped (113) epitaxial diamond layers with conventionally studied (100) and (111) epitaxial layers. Epitaxial layers were grown using resonance cavity Microwave Plasma Enhanced Chemical Vapor Deposition (MWPECVD) system. The surface morphology of epitaxial layers was studied by optical microscopy and atomic force microscopy, whereas the boron incorporation homogeneity was determined by Raman spectroscopy mapping.
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Model of carrier multiplication due to impurity impact ionization in boron-doped diamond
 Mortet, Vincent ; Lambert, Nicolas ; Hubík, Pavel ; Soltani, A.
Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.\n
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