Národní úložiště šedé literatury Nalezeno 18 záznamů.  1 - 10další  přejít na záznam: Hledání trvalo 0.00 vteřin. 
Histology and micro-CT study of diamond-coated metal bone implants in rabbit femurs
Potocký, Štěpán ; Ižák, Tibor ; Dragounová, Kateřina ; Kromka, Alexander ; Rezek, Bohuslav ; Mandys, V. ; Bartoš, M. ; Bačáková, Lucie ; Sedmera, David
A conformal coating of a thin diamond layer on three-dimensional metal bone implants was shown directly on stainless steel and TiAl6V4 cortical screw implant using ultrasonic and composite polymer pretreatment method. The best conformation coverage was achieved in the case of the WO3 interlayer for both stainless steel and TiAl6V4 screws. The process of osteointegration of the screw implants into rabbit femurs is evidenced by the formation of a bone edge via desmogenous ossification around the screws in less than six months after implantation. A detailed evaluation of the tissue reaction around the implanted screws shows good biocompatibility of diamond-coated metal bone implants.
Controlled structuring of self-assembled polystyrene microsphere arrays by two different plasma systems
Domonkos, Mária ; Ižák, Tibor ; Stolcova, L. ; Proška, J. ; Kromka, Alexander
In this study we present a successful manipulation of microspheres by reactive ion etching (RIE). A self-assembled monolayer close-packed array of monodisperse polystyrene microspheres (PM) with diameter of 471 nm was used as the primary template. The PM templates were processed in two different RIE systems: (i) capacitively coupled radiofrequency plasma (CCP) and (ii) dual plasma system which combines CCP and pulsed linear-antenna microwave plasma (PLAMWP). The influence of process conditions on the PM geometry was systematically studied by scanning electron microscopy (SEM). It was found out that choosing optimal parameters results in a tunable diameter of PM with various shapes (from spheres to pyramid-like structures) while keeping their periodic hexagonal ordering.
Diamond coated AlGaN/GaN high electron mobility transistors - effect of deposition process on gate electrode
Vanko, G. ; Ižák, Tibor ; Babchenko, O. ; Kromka, Alexander
We studied the influence of the diamond deposition on the degradation of Schottky gate electrodes (i.e. Ir or IrO2) and on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). In present study, the diamond films were selectively deposited on the AlGaN/GaN circular HEMT by focused (ellispoidal cavity reactor) and linear antenna (surface wave) microwave plasma at different temperatures from 400°C to 1100°C. The preliminary results on electrical measurements on the diamond-coated c-HEMTs showed degraded electrical properties comparing to c-HEMTs before deposition process, which was attributed to degradation of the Ir gate electrodes even at temperatures as low as 400°C. On the other hand, metal oxide gate electrode layer (IrO2) can withstand diamond CVD process even at high temperatures (~900°C) which make it suitable for fabrication of all-in-diamond c-HEMT devices for high-power applications.
In situ XPS characterization of diamond films after AR.sup.+./sup. cluster ion beam sputtering
Artemenko, Anna ; Babchenko, Oleg ; Kozak, Halyna ; Ukraintsev, Egor ; Ižák, Tibor ; Romanyuk, Olexandr ; Potocký, Štěpán ; Kromka, Alexander
In this work, in situ XPS analysis of chemical composition of H- and O-terminated nano- and microcrystalline diamond (NCD and MCD) films before and after their sputtering by the Ar+ cluster ion beam was investigated. Scanning electron microscopy confirmed sputtering of all diamond surfaces with a rate about 0.5 nm/min. Raman spectroscopy and XPS revealed surface graphitization of diamond surface induced by sputtering. Moreover, XPS data showed the presence of about 0.7 % of Ar atoms on the investigated diamond surface after 66 min of sputtering. Also, oxygen residuals were still presented on the H-NCD surface after 66 min of sputtering. In contrast, no oxygen was found on the H-MCD surface just after 2 min of sputtering. Surface composition is discussed in respect to the diamond films growth parameters and surface structure.
Applications of self-assembled 2D polystyrene nanosphere arrays
Domonkos, Mária ; Ižák, Tibor ; Demo, Pavel ; Kromka, Alexander
In this study nanosphere lithography (NSL) is demonstrated to be a low-cost, parallel and material independent fabrication process for creating periodic arrays of nanostructures using self-assembled nanospheres as templates. SA is the most feasible way to fabricate 2D or 3D colloidal crystals on large areas. After the mask preparation NSL uses different steps of plasma etching and deposition processes. The resulting patterned nanostructures have a wide range of applications in many important areas such as photonics, antireflection, surface wetting, biological and chemical sensing, solar cells, etc. This study focuses on an overview of applications of 2D colloidal crystals. First, structuring of substrate surfaces and the creation of various nano-objects (nanotips, nanopillars, nanocones) is shown. Next, direct growth of patterned structures (graphene nanomesh and diamond structures) is pointed out.
Controlled structuring of self–assembled polystyrene microsphere arrays by two different plasma systems
Domonkos, Mária ; Ižák, Tibor ; Štolcová, L. ; Proška, J. ; Kromka, Alexander
In this study we present a successful manipulation of microspheres by reactive ion etching (RIE). A self-assembled monolayer close-packed array of monodisperse polystyrene microspheres (PM) with diameter of 471 nm was used as the primary template. The PM templates were processed in two different RIE systems: (i) capacitively coupled radiofrequency plasma (CCP) and (ii) dual plasma system which combines CCP and pulsed linear-antenna microwave plasma (PLAMWP). The influence of process conditions on the PM geometry was systematically studied by scanning electron microscopy (SEM). The process conditions were controlled by varying radiofrequency (RF) power, gas mixture (O2:CF4 ratio) and process duration.
Reactive ion etching of polystyrene microspheres
Domonkos, Mária ; Ižák, Tibor ; Štolcová, L. ; Proška, J. ; Kromka, Alexander
This article gives a brief insight also into the principle of the nanosphere lithography and various plasma systems focusing on their properties and applicability for a subsequent topographical modification of surfaces prepared by NS lithography. In the experimental part of this study we present a successful manipulation of microspheres by reactive ion etching (RIE). A self-assembled monolayer close-packed array of monodisperse polystyrene microspheres is used as the primary template. The polystyrene microspheres (PM) were processed in capacitively coupled radiofrequency plasma (CCP) RIE system. The influence of process conditions on the PM geometry is systematically studied by scanning electron microscopy. The process conditions are controlled by varying radiofrequency power, total pressure, composition of the gas mixture (ratio O2:CF4) and process duration.
Study of nucleation and growth of diamond thin films
Ižák, Tibor ; Babchenko, Oleg ; Varga, Marián ; Potocký, Štěpán ; Marton, M. ; Vojs, M. ; Domonkos, Mária ; Kromka, Alexander
This study deals with the nucleation and growth of CVD diamond films on Si substrates. In nucleation part two different nucleation methods were studied: (i) the bias enhanced nucleation (BEN) and (ii) ultrasonic seeding. In the case of BEN, (i) the nucleation time and (ii) the influence of bias voltage were studied. For ultrasonic seeding the effect of different solutions of ultradisperzed detonation nanodiamond (UDD) powder with metal particles on the nucleation efficiency and growth process was investigated (i.e. diamond powder, nanosized Ni, microsized Co and Y metal powders).
Intrinsic and boron-doped diamond microstructured for electrochemical batteries
Kromka, Alexander ; Babchenko, Oleg ; Rezek, Bohuslav ; Ižák, Tibor ; Libertínová, Jitka ; Hruška, Karel ; Nyholm, L. ; de Oliviera Jorge, E.
Diamond - widest electrochemical window, excellentfor covalent binding of molecules, effective csarge transfer.

Národní úložiště šedé literatury : Nalezeno 18 záznamů.   1 - 10další  přejít na záznam:
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