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General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design
Hulicius, Eduard ; Hájek, František ; Hospodková, Alice ; Hubík, Pavel ; Gedeonová, Zuzana ; Hubáček, Tomáš ; Pangrác, Jiří ; Kuldová, Karla
GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Reduction of dislocation density considerably increases electron mobility in 2DEG. All presented results support our expectation that a suitably designed AlGaN back barrier can help to prevent this phenomenon.
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Model of carrier multiplication due to impurity impact ionization in boron-doped diamond
Mortet, Vincent ; Lambert, Nicolas ; Hubík, Pavel ; Soltani, A.
Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.\n
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(100) substrate processing optimization for fabrication of smooth boron doped epitaxial diamond layer by PE CVD
Mortet, Vincent ; Fekete, Ladislav ; Ashcheulov, Petr ; Taylor, Andrew ; Hubík, Pavel ; Trémouilles, D. ; Bedel-Pereira, E.
Boron doped diamond layers were grown in an SEKI AX5010 microwave plasma enhanced chemical vapour deposition system. Effect of surface preparation, i.e. polishing and O2/H2 plasma etching on epitaxial growth on type Ib (100) HPHT synthetic diamonds were investigated. Using optimized substrate preparation, smooth (RRMS ~ 1 nm) boron doped diamond layers with metallic conduction and free of un-epitaxial crystallites were grown with a relatively high growth rate of 3.7 μm/h. Diamond were characterized by optical microscopy, optical profilometry, atomic force microscopy and Hall effect.
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Synthesis, structure, and opto-electronic properties of organic dies on diamond
Rezek, Bohuslav ; Čermák, Jan ; Ukraintsev, Egor ; Hubík, Pavel ; Mareš, Jiří J. ; Ledinský, Martin ; Fejfar, Antonín ; Kočka, Jan ; Kromka, Alexander
We prepare a thin-film heterojunction of polypyrrole (Ppy) on hydrogen-terminated diamond by electro-polymerization from solution. We combine advanced scanning techniques (AFM, KFM, micro-Raman) to characterize microscopic structural, chemical, and opto-electronic properties of such system.
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