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Model of carrier multiplication due to impurity impact ionization in boron-doped diamond
Mortet, Vincent ; Lambert, Nicolas ; Hubík, Pavel ; Soltani, A.
Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.\n

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