National Repository of Grey Literature 40 records found  1 - 10nextend  jump to record: Search took 0.00 seconds. 
Complex ion beam based depth profiling of anticorrosive layers
Holeňák, Radek ; Král, Jaroslav (referee) ; Bábor, Petr (advisor)
Předložená diplomová práce se zabývá implementací metody rentgenové emisne indukované částicemi do experimentálního uspořádání za účelem doplnění rodiny metod založených na iontových technikách, tj. Rutherfordovy zpětné rozptylové spektrometrie, spektrometrie elastického zpětného rozptylu a analýzy detekce doby letu/energie elastického odrazu. Výhoda více-metodického přístupu je demonstrována na vrstvách ze slitin přechodných kovů obsahujících lehké prvky, kde samo-konzistentní analýza poskytuje výrazně zlepšené a přesné informace o stechiometrii, hloubkovém rozložení a tloušťce slitiny. Hmotnostní spektrometrie sekundárních iontů je použita pro porovnání a doplnění získaných výsledků.
Depth profiling of multilayers by LEIS
Strapko, Tomáš ; Duda, Radek (referee) ; Bábor, Petr (advisor)
Diplomová práce se zabývá vytvořením modelu, který by umožnil lepší interpretaci hloubkových profilů měřených metodou LEIS. Obtížnost interpretace těchto profilů je dána vysokým podílem vícenásobně odražených projektilů v meřených spektrech. Tyto projektily nepřináší užitečnou informaci z dané hloubky. Naproti tomu jednonásobně odražené projektily nesou přesnější informaci o složení a tloušťce vrstev. V této práci vytvořený model se snaží určit příspěvek jednonásobně odražených částic k celkovému tvaru spektra a na základě něj i hloubkový profil vzorku.
Quantitative analysis of matrix elements using SIMS and LEIS methods
Staněk, Jan ; Šik, Ondřej (referee) ; Bábor, Petr (advisor)
This thesis studies comparison and connection of two spectrometric methods – low energy ion scattering spektrometry (LEIS) and secondary ion mass spectrometry (SIMS). SIMS method, despite its many positive qualities, suffers of so called matrix effect, which makes quantifiaction of data very difficult. LEIS method on the other hand is immune to this effect and so it’s suitable completion of SIMS method. As a convenient sample have been chosen AlGaN samples with various concentration of gallium and aluminium. In the first part of thesis is introduced physical essence of SIMS and LEIS method, experimental details and studied samples. In second part of the thesis there’s a description of measurements and comparison of data gained by each method.
Design of secondary electron detector for ultrahigh vacuum electron microscope
Skladaný, Roman ; Zigo, Juraj (referee) ; Bábor, Petr (advisor)
In this master’s thesis, a mechanical design of an in-column secondary electrons (SE) detector is presented. It is an ultravacuum compatible fibre-scintillation detector designed for use in an ultrahigh vacuum scanning electron microscope (UHV SEM). The designed in-column SE detector was manufactured and tested upon overcoming R&D challenges. The first section of this thesis deals with theoretical basis needed for understanding of functional principles of UHV SEM system and means of SE’s detection. In the second section, mechanical design of the in-column SE detector is described. The last section describes functionality of the designed detector. Effectiveness of light shielding of the detector was tested and the detective quantum efficiency was measured. Finally, images created by the designed in-column detector and an in-chamber SE detector were evaluated and compared.
Investigation of properties of CdTe single-crystals surfaces with sub-nanometer depth resolution
Čermák, Rastislav ; Bábor, Petr (referee) ; Šik, Ondřej (advisor)
V laboratořích Středoevropského technologického institutu – CEITEC je k dispozici unikátní zařízení Qtac, umožňující kvantitativně měřit složení horní atomové vrstvy různých materiálů včetně izolátorů. Qtac k tomu využívá nízkoenergiového rozptylu iontů, tzv. metodu LEIS. Kromě analýzy horní atomové vrstvy je LEIS v Dynamickém módu schopen určit hloubkový profil koncentrace prvku se sub-nanometrovým hloubkovým rozlišením.
2D and 3D analysis of semiconductor devices by SIMS
Vařeka, Karel ; Šamořil, Tomáš (referee) ; Bábor, Petr (advisor)
The chemical analysis of semiconductor structures using the SIMS method is the main part of this bachelor thesis. It allows the user to make a depth profiling and a creation of 2D or 3D material images. During the analysis of the chip from the TIGBT semiconductor, there is a sputtering of a heterogeneous structure in the material with different sputtering rates. It is convenient to make a cut through the material using a focused ion beam to create a profile, which grants the user to perform a tomographic measurement. This new surface enables a chemical analysis of a depth profile of semiconductor structures without the need for sputtering beam in dynamic SIMS mode. By reconstructing individual two-dimensional images, it is possible to assemble a three-dimensional pattern of the analysed sample area. Also, the preparation and removal of the lamella from the TIGBT chip were accomplished and analysed via a detector of transmission electrons.
Calibration of SIMS method by implantation profiles
Janák, Marcel ; Průša, Stanislav (referee) ; Bábor, Petr (advisor)
This bachelor thesis is concerned with a quantitative analysis of the dopant (C, H, Mg, O) distribution in MOCVD-grown AlGaN HEMTs by TOF.SIMS 5 instrument with cesium and oxygen sputtering. The main reason for the development of RSF SIMS measurement quantification method is a hardly predictable phenomenon of preferential sputtering and matrix effect. Calibration samples, prepared by ion implantation technique into homogeneous and periodic III-nitride AlN, GaN structures, are reproduced by an ion-atom interaction program TRIM. A part of this work is likewise a quantification of AlGaN matrix.
Atomic structure of FeRh(001) surface
Ondračka, Václav ; Bábor, Petr (referee) ; Čechal, Jan (advisor)
Alloy of iron-rhodium, Fe50Rh50, shows a low-temperature metamagnetic phase transition between its antiferromagnetic and ferromagnetic state. A detailed description of this transition using the tools of surface analysis has not yet been done. This bachelor’s thesis focuses on preparation and characterisation of the alloy’s clean surface using X-ray photoemission spectroscopy and low-energy electron diffraction. A flat field correction and a diffraction measurement callibration is done using a sample with known crystal lattice in order to quantify the diffraction results.
Temperature drift compensation for nanostructure analysis
Hakira, Stanli ; Páleníček, Michal (referee) ; Bábor, Petr (advisor)
An ultra high vacuum apparatus for nanostructure experiments is being developed by the Tescan company in cooperation with the Institute of Physical Engineering of the Faculty of Mechanical Engineering. The apparatus is designed for preparation, modification, and analysis of nano-scale structures. A sample holder which allows heating and cooling has been developed for the apparatus. A scanning electron microscope is attached to the chamber to provide analytical and manufacturing capabilities. During experiments with heating enabled, the sample moves relative to the SEM column, causing drift of the image. This bachelor thesis proposes a solution to the problem of temperature drift by the means of motion tracking based on image registration using Fourier transform. An application complementary to the SEM control software which implements the algorithm was designed and tested at the instrument.
Study of catalytic decomposition of silica
Štubian, Martin ; Kolíbal, Miroslav (referee) ; Bábor, Petr (advisor)
This thesis deals with catalytic decomposition of silica using electron microscopy and Auger spectroscopy. The thesis is primarily focused on the Au-Si phase, which is created during in the reaction. In the theoretical part, the principle of used methods is described and recherche on the catalytic decomposition of silica is presented. The practical part contains the results of the measurements and their interpretation.

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