National Repository of Grey Literature 3 records found  Search took 0.01 seconds. 
The deposition of germanium nanoparticles on hydrogenated amorphous silicon.
Stuchlík, J. ; Volodin, V.A. ; Shklyaev, A.A. ; Stuchlikova, T.H. ; Ledinsky, M. ; Čermák, J. ; Kupčík, Jaroslav ; Fajgar, R. ; Mortet, V. ; More-Chevalier, J. ; Ashcheulov, P. ; Purkrt, A. ; Remeš, Z.
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
The deposition of germanium nanoparticles on hydrogenated amorphous silicon
Stuchlík, Jiří ; Volodin, V.A. ; Shklyaev, A.A. ; Stuchlíková, The-Ha ; Ledinský, Martin ; Čermák, Jan ; Kupčík, Jaroslav ; Fajgar, Radek ; Mortet, Vincent ; More Chevalier, Joris ; Ashcheulov, Petr ; Purkrt, Adam ; Remeš, Zdeněk
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
(100) substrate processing optimization for fabrication of smooth boron doped epitaxial diamond layer by PE CVD
Mortet, Vincent ; Fekete, Ladislav ; Ashcheulov, Petr ; Taylor, Andrew ; Hubík, Pavel ; Trémouilles, D. ; Bedel-Pereira, E.
Boron doped diamond layers were grown in an SEKI AX5010 microwave plasma enhanced chemical vapour deposition system. Effect of surface preparation, i.e. polishing and O2/H2 plasma etching on epitaxial growth on type Ib (100) HPHT synthetic diamonds were investigated. Using optimized substrate preparation, smooth (RRMS ~ 1 nm) boron doped diamond layers with metallic conduction and free of un-epitaxial crystallites were grown with a relatively high growth rate of 3.7 μm/h. Diamond were characterized by optical microscopy, optical profilometry, atomic force microscopy and Hall effect.