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Study of processes during the organosilicone thin films deposition
Flamíková, Kristýna ; Rašková, Zuzana (referee) ; Krčma, František (advisor)
The aim of this work is plasma diagnostic during the deposition of thin films based on organosilicone compounds. Tetravinylsilane (TVS) was used in this study; the optical emission spectroscopy was applied for the diagnostics. The theoretical part of this work gives a basic fundaments of optical emission spectroscopy and brings the procedures for rotational, vibrational, and electron temperature calculations. The deposition process was carried out in pulsed regime with duty cycle 1:4 to 1:499. The pure TVS and TVS containing 10, 40 and 80 % with total gas mixture flow rate of 0.5 sccm were used during the deposition. The hydrogen atomic lines and many rotational lines of molecular hydrogen were identified in the spectra. Besides them, the molecular band of SiH, CH and C2 were observed. The atomic oxygen lines and continuum with a maximum at 550 nm were recorded in the case when oxygen was added. The rotational temperature calculated from 0-0 CH band was in the range 1700 - 2100 K depending on the discharge conditions. The electron temperature of about 1800 K was calculated from hydrogen atomic lines. The experimental results showed the partial plasma composition and some plasma basic characteristics were obtained.
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Diagnostics of thin layer deposition using tetravinylsilane monomer
Flamíková, Kristýna ; Dvořák,, Pavel (referee) ; Krčma, František (advisor)
The aim of this work is plasma diagnostic during the deposition of thin films based on organosilicone compounds. These layers have a wide range of applications mainly as protective coatings or intermediate phase in composites reinforced by glass fibers. The theoretical part of this work gives a basic fundaments of optical emission spectroscopy and mass spectroscopy and describes procedures for rotational, vibrational, and electron temperature calculations. The RF capacitive coupled discharge in configuration with planar electrodes was used with tetravinylsilane (TVS) organosilicone monomer in this study. The optical emission spectroscopy and mass spectroscopy were applied for the plasma diagnostics. The deposition process was carried out in continuous regime with applied power of 20, 25, 40, 50, 60, and 70 W, some experiments were done also in pulsed regime with duty cycle 1:1, 1:4 and 1:9 at fixed power of 50 W and 10 W when discharge was on. The atomic lines of hydrogen Balmer series and many rotational lines of molecular hydrogen were identified in the spectra. Besides them, the molecular bands of SiH, CH and C2 species were observed. The rotational temperature calculated from 0-0 CH band was in the range of 600 – 1000 K depending on the discharge conditions. The electron temperature in the range of 3600-7500 K was calculated from hydrogen atomic lines. In situ mass spectra collected simultaneously with optical emission spectra showed TVS monomer fragmentation increase with the increase of applied power in continuous regime. This result well correlated with OES in case of CH radical and hydrogen species, the other particles were mainly non-measurable by emission spectroscopy. The same results were also obtained with respect to the duty cycle parameter. The presented results clearly demonstrated the increase of monomer fragmentation with the increase of mean applied discharge power. Determination of prepared layer properties is a subject of other works and their relation to the plasma parameters will be a subject of further studies.
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Diagnostics of thin layer deposition using tetravinylsilane monomer
Flamíková, Kristýna ; Dvořák,, Pavel (referee) ; Krčma, František (advisor)
The aim of this work is plasma diagnostic during the deposition of thin films based on organosilicone compounds. These layers have a wide range of applications mainly as protective coatings or intermediate phase in composites reinforced by glass fibers. The theoretical part of this work gives a basic fundaments of optical emission spectroscopy and mass spectroscopy and describes procedures for rotational, vibrational, and electron temperature calculations. The RF capacitive coupled discharge in configuration with planar electrodes was used with tetravinylsilane (TVS) organosilicone monomer in this study. The optical emission spectroscopy and mass spectroscopy were applied for the plasma diagnostics. The deposition process was carried out in continuous regime with applied power of 20, 25, 40, 50, 60, and 70 W, some experiments were done also in pulsed regime with duty cycle 1:1, 1:4 and 1:9 at fixed power of 50 W and 10 W when discharge was on. The atomic lines of hydrogen Balmer series and many rotational lines of molecular hydrogen were identified in the spectra. Besides them, the molecular bands of SiH, CH and C2 species were observed. The rotational temperature calculated from 0-0 CH band was in the range of 600 – 1000 K depending on the discharge conditions. The electron temperature in the range of 3600-7500 K was calculated from hydrogen atomic lines. In situ mass spectra collected simultaneously with optical emission spectra showed TVS monomer fragmentation increase with the increase of applied power in continuous regime. This result well correlated with OES in case of CH radical and hydrogen species, the other particles were mainly non-measurable by emission spectroscopy. The same results were also obtained with respect to the duty cycle parameter. The presented results clearly demonstrated the increase of monomer fragmentation with the increase of mean applied discharge power. Determination of prepared layer properties is a subject of other works and their relation to the plasma parameters will be a subject of further studies.
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Study of processes during the organosilicone thin films deposition
Flamíková, Kristýna ; Rašková, Zuzana (referee) ; Krčma, František (advisor)
The aim of this work is plasma diagnostic during the deposition of thin films based on organosilicone compounds. Tetravinylsilane (TVS) was used in this study; the optical emission spectroscopy was applied for the diagnostics. The theoretical part of this work gives a basic fundaments of optical emission spectroscopy and brings the procedures for rotational, vibrational, and electron temperature calculations. The deposition process was carried out in pulsed regime with duty cycle 1:4 to 1:499. The pure TVS and TVS containing 10, 40 and 80 % with total gas mixture flow rate of 0.5 sccm were used during the deposition. The hydrogen atomic lines and many rotational lines of molecular hydrogen were identified in the spectra. Besides them, the molecular band of SiH, CH and C2 were observed. The atomic oxygen lines and continuum with a maximum at 550 nm were recorded in the case when oxygen was added. The rotational temperature calculated from 0-0 CH band was in the range 1700 - 2100 K depending on the discharge conditions. The electron temperature of about 1800 K was calculated from hydrogen atomic lines. The experimental results showed the partial plasma composition and some plasma basic characteristics were obtained.
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