Original title: Tantalum Capacitor As A Mis Structure: Transport Characteristics Temperature Dependencies
Authors: Kuparowitz, Martin ; Kuparowitz, Tomáš
Document type: Papers
Language: eng
Publisher: Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract: Temperature dependencies of a leakage current in normal mode are explained on the basis of a model, in which the solid state tantalum capacitor is considered as a metal-insulatorsemiconductor (MIS) heterostructure. The measurement was performed in temperature range from 105 to 155°C. Ohmic conductivity increases exponentially with increasing temperature with activation energy 0.94 eV. Tunneling voltage parameter and tunneling energy barrier decreases with increasing temperature, reaching values 0.45 to 0.26 eV.
Keywords: activation energy; I-V characteristics; MIS structure; tantalum capacitor; tunneling energy barrier
Host item entry: Proceedings of the 23st Conference STUDENT EEICT 2017, ISBN 978-80-214-5496-5

Institution: Brno University of Technology (web)
Document availability information: Fulltext is available in the Brno University of Technology Digital Library.
Original record: http://hdl.handle.net/11012/187182

Permalink: http://www.nusl.cz/ntk/nusl-414842


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