TY - GEN TI - Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure T3 - Student scientific conference of solid state engineering and materials /8./ AU - Hájek, František AB - Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be used. This works presents the effects of Si doping in different layers around the MQW area. On the basis of photoluminescence and cathodoluminescence measurements and band structure simulation, the piezoelectric field is most efficiently reduced when both layers under and over MQW area are Si doped.\n SN - 978-80-01-06511-2 UR - http://hdl.handle.net/11104/0294317 UR - http://www.nusl.cz/ntk/nusl-393218 A2 - Hospodková, Alice A2 - Slavická Zíková, Markéta A2 - Oswald, Jiří LA - eng KW - semiconductor doping KW - quantum wells KW - luminescence KW - nitrides PY - 2018 PB - Fyzikální ústav, Na Slovance 2, 182 21 Praha 8, http://www.fzu.cz/ ER -