Original title: The deposition of germanium nanoparticles on hydrogenated amorphous silicon
Authors: Stuchlík, Jiří ; Volodin, V.A. ; Shklyaev, A.A. ; Stuchlíková, The-Ha ; Ledinský, Martin ; Čermák, Jan ; Kupčík, Jaroslav ; Fajgar, Radek ; Mortet, Vincent ; More Chevalier, Joris ; Ashcheulov, Petr ; Purkrt, Adam ; Remeš, Zdeněk
Document type: Papers
Conference/Event: NANOCON 2016. International Conference on Nanomaterials - Research and Application /8./, Brno (CZ), 20161019
Year: 2017
Language: eng
Abstract: We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
Keywords: a-Si:H; Ge nanoparticles; MBE; PECVD
Project no.: GA13-12386S (CEP), KONNECT-007, GA13-31783S (CEP)
Funding provider: GA ČR, AV ČR, GA ČR
Host item entry: NANOCON 2016 8th International Conference on Nanomaterials - Research & Application. Conference proceedings, ISBN 978-80-87294-71-0
Note: Související webová stránka: https://www.nanocon.eu/cz/sbornik-nanocon-2016/

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0274527

Permalink: http://www.nusl.cz/ntk/nusl-364671


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