Název:
Nanopatterning of Silicon Nitride Membranes
Autoři:
Matějka, Milan ; Krátký, Stanislav ; Řiháček, Tomáš ; Kolařík, Vladimír ; Chlumská, Jana ; Urbánek, Michal Typ dokumentu: Příspěvky z konference Konference/Akce: NANOCON 2016. International Conference on Nanomaterials - Research and Application /8./, Brno (CZ), 20161019
Rok:
2017
Jazyk:
eng
Abstrakt: Membranes are typically created by a thin silicon nitride (SIN) layer deposited on a silicon wafer. Both, top and bottom side of the wafer is covered by a thin layer of the silicon nitride. The principle of silicon nitride membranes preparation is based on the wet anisotropic etching of the bottom side of the silicon wafer with crystallographic orientation (100). While the basic procedure for the preparation of such membranes is well known, the nano patterning of thin membranes presents quite important challenges. This is partially due to the mechanical stress which is typically presented within such membranes. The resolution requirements of the membrane patterning have gradually increased. Advanced lithographic techniques and etching procedures had to be developed. This paper summarizes theoretical aspects, technological issues and achieved results. The application potential of silicon nitride membranes as a base for multifunctional micro system (MMS) is also\ndiscussed.
Klíčová slova:
anisotropic etching; e-beam writer; nano patterning; silicon nitride membranes Číslo projektu: TE01020233 (CEP), LO1212 (CEP), ED0017/01/01 Poskytovatel projektu: GA TA ČR, GA MŠk, GA MŠk Zdrojový dokument: NANOCON 2016. 8th International Conference on Nanomaterials - Research and Application. Conference Proceedings, ISBN 978-80-87294-71-0
Instituce: Ústav přístrojové techniky AV ČR
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Informace o dostupnosti dokumentu:
Dokument je dostupný v příslušném ústavu Akademie věd ČR. Původní záznam: http://hdl.handle.net/11104/0270768