Original title: Diamond coated AlGaN/GaN high electron mobility transistors - effect of deposition process on gate electrode
Authors: Vanko, G. ; Ižák, Tibor ; Babchenko, O. ; Kromka, Alexander
Document type: Papers
Conference/Event: NANOCON 2015. International Conference /7./, Brno (CZ), 20151014
Year: 2015
Language: eng
Abstract: We studied the influence of the diamond deposition on the degradation of Schottky gate electrodes (i.e. Ir or IrO2) and on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). In present study, the diamond films were selectively deposited on the AlGaN/GaN circular HEMT by focused (ellispoidal cavity reactor) and linear antenna (surface wave) microwave plasma at different temperatures from 400°C to 1100°C. The preliminary results on electrical measurements on the diamond-coated c-HEMTs showed degraded electrical properties comparing to c-HEMTs before deposition process, which was attributed to degradation of the Ir gate electrodes even at temperatures as low as 400°C. On the other hand, metal oxide gate electrode layer (IrO2) can withstand diamond CVD process even at high temperatures (~900°C) which make it suitable for fabrication of all-in-diamond c-HEMT devices for high-power applications.
Keywords: CVD diamond; GaN HEMT; iridium oxide; IV characteristics; thermal stability
Project no.: GP14-16549P (CEP)
Funding provider: GA ČR
Host item entry: NANOCON 2015 Conference Proceedings, ISBN 978-80-87294-59-8

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0263605

Permalink: http://www.nusl.cz/ntk/nusl-261325


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Research > Institutes ASCR > Institute of Physics
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