Original title: GaAsSb strain reducing layer covering InAs/GaAs quantum dots
Authors: Zíková, Markéta ; Hospodková, Alice ; Pangrác, Jiří ; Oswald, Jiří ; Kubištová, Jana ; Hulicius, Eduard ; Komninou, Ph. ; Kioseoglou, J. ; Nikitis, F.
Document type: Papers
Conference/Event: Studentská vědecká konference fyziky pevných látek /3./, Krkonoše (CZ), 2013-06-28 / 2013-07-02
Year: 2013
Language: eng
Abstract: GaAsSb is often used as a capping material for InAs quantum dots (QDs) due to its suitable conduction band alignment and suppression of In segregation from QDs during the capping process.We have found out that during the GaAsSb layer growth, Sb atoms segregate above InAs QDs, which is proved by the AFM and HRTEM measurements. For higher amount of Sb in GaAsSb, the measured photoluminescence (PL) has longer wavelength, but if it is too high, the structure may become type II with decreased PL intensity. For thick GaAsSb layer, the PL intensity decreases, because only big QDs participate to the PL.
Keywords: GaAsSb; InAs; quantum dot; strain reducing layer
Project no.: GA13-15286S (CEP), 7AMB12GR034 (CEP), LM2011026 (CEP)
Funding provider: GA ČR, GA MŠk, GA MŠk
Host item entry: Studentská vědecká konference fyziky pevných látek /3./, ISBN 978-80-01-05344-7

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0226876

Permalink: http://www.nusl.cz/ntk/nusl-166098


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