Original title: Renewal of three-dimensional nanocrystalline diamond bio-transistor by low temperature hydrogenation
Authors: Krátká, Marie ; Neykova, Neda ; Ukraintsev, Egor ; Kromka, Alexander ; Rezek, Bohuslav
Document type: Papers
Conference/Event: Pracovní setkání fyzikálních chemiků a elektrochemiků /12./, Brno (CZ), 2012-05-30 / 2012-05-31
Year: 2012
Language: eng
Abstract: We employ directly grown microscopic (20um and 5um) solution-gated field-effect transistors (SGFET) as a biosensor with H-terminated surface acting as a gate insulator towards solution and generator of surface conductivity at the same time.
Keywords: H-terminated surface; low temperature hydrogenation; nanocrystalline diamond; solution-gated field-effect transistors (SGFETs)
Project no.: CEZ:AV0Z10100521 (CEP), GAP108/12/0996 (CEP), GBP108/12/G108 (CEP), GD202/09/H041 (CEP)
Funding provider: GA ČR, GA ČR, GA ČR
Host item entry: XII. Pracovní setkání fyzikálních chemiků a elektrochemiků - sborník příspěvků, ISBN 978-80-7375-618-5

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0217681

Permalink: http://www.nusl.cz/ntk/nusl-142335


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Research > Institutes ASCR > Institute of Physics
Conference materials > Papers
 Record created 2013-01-31, last modified 2021-11-24


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